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STPS10150CFPSTN/a100avaiHigh Voltage Power Schottky Rectifier


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STPS10150CFP
High Voltage Power Schottky Rectifier
June 2006 Rev 6 1/9
STPS10150C

High voltage power Schottky rectifier
Main product characteristics
Features and benefits
HIgh junction temperature capability Good trade off between leakage current and
forward voltage drop Low leakage current Avalanche capability specified Insulated package TO-220FPAB
Insulating voltage = 2000 V
Typical package capacitance 12 pF
Description

Dual center tap schottky rectifier designed for
high frequency Switched Mode Power Supplies.
Order Codes


Table 1. Absolute ratings (limiting values)
condition to avoid thermal runaway for a diode on its own heatsink
dPtot
dTj--------------- 1
Rthja–()--------------------------<
Characteristics STPS10150C
2/9
1 Characteristics


When the diodes 1 and 2 are used simultaneously:
∆Tj(diode 1) = P(diode 1) x Rth(j-l)(Per diode) + P(diode 2) x Rth(c)

To evaluate the conduction losses use the following equation:
P = 0.65 x IF(AV) + 0.02 IF2 (RMS)

Table 2. Thermal resistance
Table 3. Static electrical characteristics (per diode)
tp = 5 ms, δ < 2% tp = 380 µs, δ < 2%
Figure 1. Average forward power
dissipation versus average
forward current (per diode)
Figure 2. Average forward current versus
ambient temperature (δ = 0.5, per
diode)
STPS10150C Characteristics
3/9



Figure 3. Normalized avalanche power
derating versus pulse duration
Figure 4. Normalized avalanche power
derating versus junction
temperature
Figure 5. Non repetitive surge peak
forward current versus overload
duration - maximum values, per
diode (TO-220AB, D2 PAK)
Figure 6. Non repetitive surge peak forward
current versus overload duration
- maximum values, per diode
(TO-220FPAB)
Figure 7. Relative variation of thermal
impedance junction to case versus
pulse duration (TO-220AB, D2 PAK)
Figure 8. Relative variation of thermal
impedance junction to case versus
pulse duration (TO-220FPAB)
Characteristics STPS10150C
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Figure 9. Reverse leakage current versus
reverse voltage applied (typical
values, per diode)
Figure 10. Junction capacitance versus
reverse voltage applied (typical
values, per diode)
Figure 11. Forward voltage drop versus
forward current (per diode)
Figure 12. Thermal resistance, junction to
ambient, versus copper surface
under tab - Epoxy printed circuit
board, ecu 35 µm (D2 PAK only)
Figure 13. Thermal resistance, junction to
ambient, versus copper surface
under tab - Epoxy printed circuit
board, ecu 35 µm (TO220FPAB only)
STPS10150C Package information
5/9
2 Package information

Epoxy meets UL94, V0.

Figure 14. D2 PAK footprint dimensions (in mm)
Table 4. D2 PAK Dimensions
Package information STPS10150C
6/9
Table 5. TO-220AB Dimensions
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