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STB9NK50ZSTN/a500avaiN-CHANNEL 500V 0.72 OHM TO-220/TO-220FP/D2PAK ZENER-PROTECTED SUPERMESH POWER MOSFET
STP9NK50Z |STP9NK50ZST N/a5500avaiN-CHANNEL 500V 0.72 OHM TO-220/TO-220FP/D2PAK ZENER-PROTECTED SUPERMESH POWER MOSFET
STP9NK50ZFPST,STN/a10000avaiN-CHANNEL 500V 0.72 OHM TO-220/TO-220FP/D2PAK ZENER-PROTECTED SUPERMESH POWER MOSFET


STP9NK50ZFP ,N-CHANNEL 500V 0.72 OHM TO-220/TO-220FP/D2PAK ZENER-PROTECTED SUPERMESH POWER MOSFETFEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically bee ..
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STB9NK50Z-STP9NK50Z -STP9NK50ZFP
N-CHANNEL 500V 0.72 OHM TO-220/TO-220FP/D2PAK ZENER-PROTECTED SUPERMESH POWER MOSFET
1/12June 2002
STP9NK50Z - STP9NK50ZFP
STB9NK50Z

N-CHANNEL 500V - 0.72Ω - 7.2A TO-220/TO-220FP/D2 PAK
Zener-Protected SuperMESH™ Power MOSFET TYPICAL RDS(on) = 0.72 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTION

The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC LIGHTING
ORDERING INFORMATION
STP9NK50Z - STP9NK50ZFP - STB9NK50Z
ABSOLUTE MAXIMUM RATINGS
) Pulse width limited by safe operating area
(1) ISD ≤7.2A, di/dt ≤200A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and cost-
effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage
of external components.
3/12
STP9NK50Z - STP9NK50ZFP - STB9NK50Z
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)

ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
STP9NK50Z - STP9NK50ZFP - STB9NK50Z
Transfer CharacteristicsOutput CharacteristicsSafe Operating Area For TO-220FP
Safe Operating Area For TO-220/D2PAK Thermal Impedance For TO-220/D2PAK
5/12
STP9NK50Z - STP9NK50ZFP - STB9NK50Z
Gate Charge vs Gate-source Voltage
Normalized On Resistance vs TemperatureNormalized Gate Threshold Voltage vs Temp.
Capacitance Variations
Transconductance
STP9NK50Z - STP9NK50ZFP - STB9NK50Z
Maximum Avalanche Energy vs Temperature
Normalized BVDSS vs TemperatureSource-drain Diode Forward Characteristics
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