STP8NS25 ,N-CHANNEL 250V 0.38 OHM 8A TO-220/TO-220FP MESH OVERLAY MOSFETSTP8NS25STP8NS25FPN-CHANNEL 250V - 0.38Ω - 8A TO-220/TO-220FPMESH OVERLAY™ MOSFETTYPE V R IDSS DS(o ..
STP8NS25. ,N-CHANNEL 250V 0.38 OHM 8A TO-220/TO-220FP MESH OVERLAY MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP8NS25 STP8NS25FPV Drain-source Voltage (V = 0 ..
STP90N4F3 , N-channel 40 V, 5.0 mΩ, 80 A, DPAK, TO-220, IPAK, I2PAK STripFET™ III Power MOSFET
STP90N55F4 ,N-channel 55 V, 0.0064 Ohm, 90 A TO-220 Power MOSFETElectrical characteristics(T = 25 °C unless otherwise specified)CASE Table 4. On/off state ..
STP90NF03L ,N-CHANNEL 30V 0.0056 OHM 90A TO-220/I2PAK LOW GATE CHARGE STRIPFET POWER MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STP9NB50 ,N-CHANNEL 500VELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
T0905 ,General-purpose VHF/UHF Power Amplifier (135 to 600 MHz)Applications Professional PhonesGeneral- Hands-free Sets ISM Band Application Wireless Infrastr ..
T0980 ,SiGe Transmit/Receive Front-end ICFeatures• Power Amplifier with High Power Added Efficient (PAE), P Typically 29 dBmout• Controlled ..
T1001NL , TELECOMMUNICATIONS PRODUCTS
T1005 , TELECOMMUNICATIONS PRODUCTS
T1006NL , TELECOMMUNICATIONS PRODUCTS
T1007 , TELECOMMUNICATIONS PRODUCTS
STP8NS25-STP8NS25.
N-CHANNEL 250V 0.38 OHM 8A TO-220/TO-220FP MESH OVERLAY MOSFET
1/9April 2001
STP8NS25
STP8NS25FPN-CHANNEL 250V - 0.38Ω - 8A TO-220/TO-220FP
MESH OVERLAY™ MOSFET TYPICAL RDS(on) = 0.38 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED
DESCRIPTIONUsing the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performance. The new patented STrip layout cou-
pled with the Company’s proprietary edge termina-
tion structure, makes it suitable in coverters for
lighting applications.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) DC-DC CONVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS(•)Pulse width limited by safe operating area
(1) ISD≤ 8A, di/dt≤300 A/μs, VDD≤ V(BR)DSS, Tj≤TjMAX
(*)Limited only by maximum temperature allowed
STP8NS25/STP8NS25FP
THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF (1)
DYNAMIC
3/9
STP8NS25/STP8NS25FP
Safe Operating Area for TO-220
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
Safe Operating Area for TO-220FP
STP8NS25/STP8NS25FP
Thermal Impedence for TO-220FP
Static Drain-source On ResistanceTransconductance
Output Characteristics
Thermal Impedence for TO-220
5/9
STP8NS25/STP8NS25FP
Source-drain Diode Forward Characteristics
Normalized On Resistance vs TemperatureNormalized Gate Thereshold Voltage vs Temp.
Gate Charge vs Gate-source Voltage Capacitance Variations
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For Resistive Load
