STP8NM60ND ,N-channel 600 V, 0.59 Ohm, 7 A, FDmesh(TM) II Power MOSFET (with fast diode) TO-220Electrical characteristics(T = 25 °C unless otherwise specified)CASE Table 5. On/off statesSymbol P ..
STP8NS25 ,N-CHANNEL 250V 0.38 OHM 8A TO-220/TO-220FP MESH OVERLAY MOSFETSTP8NS25STP8NS25FPN-CHANNEL 250V - 0.38Ω - 8A TO-220/TO-220FPMESH OVERLAY™ MOSFETTYPE V R IDSS DS(o ..
STP8NS25. ,N-CHANNEL 250V 0.38 OHM 8A TO-220/TO-220FP MESH OVERLAY MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP8NS25 STP8NS25FPV Drain-source Voltage (V = 0 ..
STP90N4F3 , N-channel 40 V, 5.0 mΩ, 80 A, DPAK, TO-220, IPAK, I2PAK STripFET™ III Power MOSFET
STP90N55F4 ,N-channel 55 V, 0.0064 Ohm, 90 A TO-220 Power MOSFETElectrical characteristics(T = 25 °C unless otherwise specified)CASE Table 4. On/off state ..
STP90NF03L ,N-CHANNEL 30V 0.0056 OHM 90A TO-220/I2PAK LOW GATE CHARGE STRIPFET POWER MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
T0905 ,General-purpose VHF/UHF Power Amplifier (135 to 600 MHz)Applications Professional PhonesGeneral- Hands-free Sets ISM Band Application Wireless Infrastr ..
T0980 ,SiGe Transmit/Receive Front-end ICFeatures• Power Amplifier with High Power Added Efficient (PAE), P Typically 29 dBmout• Controlled ..
T1001NL , TELECOMMUNICATIONS PRODUCTS
T1005 , TELECOMMUNICATIONS PRODUCTS
T1006NL , TELECOMMUNICATIONS PRODUCTS
T1007 , TELECOMMUNICATIONS PRODUCTS
STP8NM60ND
N-channel 600 V, 0.59 惟, 7 A, FDmesh蛺2;2; II Power MOSFET TO-220, TO-220FP, IPAK, DPAK
February 2009 Rev 1 1/17
STD8NM60ND, STF8NM60NDSTP8NM60ND, STU8NM60NDN-channel 600 V , 0.59 Ω , 7 A, FDmesh™ II Power MOSFET
TO-220, TO-220FP , IPAK, DPAK
Features The worldwide best RDS(on)* area amongst the
fast recovery diode devices 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Extremely high dv/dt and avalanche
capabilities
Application Switching applications
DescriptionThe FDmesh™ II series belongs to the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout and
associates all advantages of reduced on-
resistance and fast switching with an intrinsic fast-
recovery body diode.Strongly recommended for
bridge topologies, in ZVS phase-shift converters.
Figure 1. Internal schematic diagram Limited only by maximum temperature allowed
Table 1. Device summary
Contents STx8NM60ND2/17
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42.1 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
STx8NM60ND Electrical ratings
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1 Electrical ratings
Table 2. Absolute maximum ratings Limited only by maximum temperature allowed Pulse width limited by safe operating area ISD ≤ 7 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS
Table 3. Thermal data
Table 4. Avalanche characteristics
Electrical characteristics STx8NM60ND
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2 Electrical characteristics
(TCASE= 25 °C unless otherwise specified)
Table 5. On/off states Characteristics value at turn off on inductive load
Table 6. Dynamic Pulsed: pulse duration = 300µs, duty cycle 1.5% Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
STx8NM60ND Electrical characteristics
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Table 7. Switching times
Table 8. Source drain diode Pulse width limited by safe operating area Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Electrical characteristics STx8NM60ND
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2.1 Electrical characteristics
Figure 2. Safe operating area for TO-220 Figure 3. Thermal impedance for TO-220
Figure 4. Safe operating area for DPAK, IPAK Figure 5. Thermal impedance for DPAK, IPAK
Figure 6. Safe operating area for TO-220FP Figure 7. Thermal impedance for TO-220FP
STx8NM60ND Electrical characteristics
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Figure 8. Output characteristics Figure 9. Transfer characteristics
Figure 10. Transconductance Figure 11. Static-drain source on resistance
Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations
Electrical characteristics STx8NM60ND
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Figure 14. Normalized gate threshold voltage
vs temperature
Figure 15. Normalized on resistance vs
temperature
Figure 16. Source-drain diode forward
characteristics
Figure 17. Normalized BVDSS vs temperature
STx8NM60ND Test circuits
9/17 Test circuits
Figure 18. Switching times test circuit for
resistive load
Figure 19. Gate charge test circuit
Figure 20. Test circuit for inductive load
switching and diode recovery times
Figure 21. Unclamped inductive load test
circuit
Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform
