STP8NM60FP ,N-CHANNEL 600V 0.9 OHM 8A TO-220/TO-220FP/DPAK/IPAK MDMESH POWER MOSFETSTP8NM60, STP8NM60FPSTD5NM60, STD5NM60-1N-CHANNEL 600V - 0.9Ω - 8A TO-220/TO-220FP/DPAK/IPAKMDmesh™ ..
STP8NM60N , N-channel 600 V - 0.56 Ω - 7 A - TO-220 - TO-220FP - IPAK - DPAK second generation MDmesh™ Power MOSFET
STP8NM60ND ,N-channel 600 V, 0.59 Ohm, 7 A, FDmesh(TM) II Power MOSFET (with fast diode) TO-220Electrical characteristics(T = 25 °C unless otherwise specified)CASE Table 5. On/off statesSymbol P ..
STP8NS25 ,N-CHANNEL 250V 0.38 OHM 8A TO-220/TO-220FP MESH OVERLAY MOSFETSTP8NS25STP8NS25FPN-CHANNEL 250V - 0.38Ω - 8A TO-220/TO-220FPMESH OVERLAY™ MOSFETTYPE V R IDSS DS(o ..
STP8NS25. ,N-CHANNEL 250V 0.38 OHM 8A TO-220/TO-220FP MESH OVERLAY MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP8NS25 STP8NS25FPV Drain-source Voltage (V = 0 ..
STP90N4F3 , N-channel 40 V, 5.0 mΩ, 80 A, DPAK, TO-220, IPAK, I2PAK STripFET™ III Power MOSFET
T0905 ,General-purpose VHF/UHF Power Amplifier (135 to 600 MHz)Applications Professional PhonesGeneral- Hands-free Sets ISM Band Application Wireless Infrastr ..
T0980 ,SiGe Transmit/Receive Front-end ICFeatures• Power Amplifier with High Power Added Efficient (PAE), P Typically 29 dBmout• Controlled ..
T1001NL , TELECOMMUNICATIONS PRODUCTS
T1005 , TELECOMMUNICATIONS PRODUCTS
T1006NL , TELECOMMUNICATIONS PRODUCTS
T1007 , TELECOMMUNICATIONS PRODUCTS
STD5NM60-STP8NM60-STP8NM60FP
N-CHANNEL 600V
1/13September 2002
STP8NM60, STP8NM60FP
STD5NM60, STD5NM60-1N-CHANNEL 600V - 0.9Ω - 8A TO-220/TO-220FP/DPAK/IPAK
MDmesh™ Power MOSFET TYPICAL RDS(on) = 0.9Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE
CHARGE LOW GATE INPUT RESISTANCE
DESCRIPTIONThe MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH™ horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar completition’s products.
APPLICATIONSThe MDmesh™ family is very suitable for increase
the power density of high voltage converters allow-
ing system miniaturization and higher efficiencies.
ORDERING INFORMATION
STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1
ABSOLUTE MAXIMUM RATINGS ) Pulse width limited by safe operating area
(1) ISD ≤5A, di/dt ≤400A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)ON/OFF
3/13
STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
DYNAMICSWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1
Safe Operating Area For TO-220FP
Safe Operating Area For TO-220 Thermal Impedance For TO-220
Safe Operating Area For DPAK/IPAK
Thermal Impedance For TO-220FP
Thermal Impedance For DPAK/IPAK
5/13
STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1
Transconductance Static Drain-source On Resistance
Transfer CharacteristicsOutput Characteristics
Capacitance VariationsGate Charge vs Gate-source Voltage
STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1
Normalized On Resistance vs TemperatureNormalized Gate Thereshold Voltage vs Temp.
Source-drain Diode Forward Characteristics
7/13
STP8NM60, STP8NM60FP, STD5NM60, STD5NM60-1
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test CircuitFig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuit For Resistive Load
