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STW8NK80ZSTN/a166avaiN-CHANNEL 800V
STP8NK80ZSTN/a485avaiN-CHANNEL 800V
STP8NK80ZFPST N/a10000avaiN-CHANNEL 800V


STP8NK80ZFP ,N-CHANNEL 800VSTP8NK80Z - STP8NK80ZFPSTW8NK80ZN-CHANNEL 800V - 1.3Ω - 6.2A TO-220/TO-220FP/TO-247Zener-Protected ..
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STP8NK80Z-STP8NK80ZFP-STW8NK80Z
N-CHANNEL 800V
1/11February 2003
STP8NK80Z- STP8NK80ZFP
STW8NK80Z

N-CHANNEL 800V- 1.3Ω - 6.2A TO-220/TO-220FP/TO-247
Zener-Protected SuperMESH™Power MOSFET TYPICAL RDS(on)= 1.3Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTION

The SuperMESH™ seriesis obtained through an
extreme optimizationof ST’s well established strip-
based PowerMESH™ layout.In additionto pushing
on-resistance significantly down, special careis tak-to ensurea very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full rangeof high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC LIGHTING
ORDERING INFORMATION
STP8NK80Z- STP8NK80ZFP- STW8NK80Z
2/11
ABSOLUTE MAXIMUM RATINGS
) Pulse width limitedby safe operating area
(1)ISD ≤6.2A, di/dt ≤200 A/μs, VDD≤ V(BR)DSS,Tj≤ TJMAX.
(*) Limited onlyby maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designedto enhance not only the device’s
ESD capability, but alsoto make them safely absorb possible voltage transients that may occasionallybe
applied from gateto source.In this respect the Zener voltageis appropriateto achievean efficient and
cost-effective interventionto protect the device’s integrity. These integrated Zener diodes thus avoid the
usageof external components.
3/11
STP8NK80Z- STP8NK80ZFP- STW8NK80Z
ELECTRICAL CHARACTERISTICS
(TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration=300μs, duty cycle1.5%. Pulse width limitedby safe operating area. Cosseq.is definedasa constant equivalent capacitance givingthe same charging timeas Coss when VDS increases from0to 80%
VDSS.
STP8NK80Z- STP8NK80ZFP- STW8NK80Z
4/11
Thermal Impedance For TO-247Safe Operating Area For TO-247
Thermal Impedance For TO-220FPSafe Operating Area For TO-220FP
Safe Operating Area For TO-220
5/11
STP8NK80Z- STP8NK80ZFP- STW8NK80Z
Capacitance VariationsGate Chargevs Gate-source Voltage
Transconductance
Transfer CharacteristicsOutput Characteristics
STP8NK80Z- STP8NK80ZFP- STW8NK80Z
6/11
Maximum Avalanche Energyvs Temperature
Normalized
Normalized On Resistancevs Temperature
Source-drain
Normalized Gate Threshold Voltagevs Temp.
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