STB8NC70Z-1 ,N-CHANNEL 700V 0.90 OHM 6.8A TO-220/TO-220FP/I2PAK ZENER-PROTECTED POWERMESH III MOSFETELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ONSymbol Parameter Test Conditions Min. Typ. Max. U ..
STB8NM60T4 ,N-CHANNEL 650V@TjmaxAbsolute maximum ratingsValueSymbol Parameter UnitTO-220 IPAKTO-220FPD²PAK DPAKV Gate-source voltag ..
STB90NF03L ,N-CHANNEL 30V 0.0056 OHM 90A D2PAK LOW GATE CHARGE STRIPFET POWER MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STB90NF03LT4 ,N-CHANNEL 30V 0.0056 OHM 90A D2PAK LOW GATE CHARGE STRIPFET POWER MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STB95NF03T4 ,N-CHANNEL 30VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 30 VDS GSV Drain- ..
STB9NB50 ,N-CHANNEL 500VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 500 VDS GSV Drain ..
STV2286H ,I2C BUS-CONTROLLED MULTISTANDARD SINGLE CHIP TV PROCESSORELECTRICAL CHARACTERISTICS . . . . . . 264.1
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STV240N75F3 ,N-channel 75 V, 3 mOhm typ., 200 A STripFET F3 Power MOSFET in PowerSO-10 packageElectrical characteristics(T =25 °C unless otherwise specified)CASETable 4. On /off statesSymbol Pa ..
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STB8NC70Z-1-STP8NC70Z-STP8NC70ZFP
N-CHANNEL 700V 0.90 OHM 6.8A TO-220/TO-220FP/D2PAK/I2PAK ZENER-PROTECTED POWERMESH III MOSFET
1/13December 2002
STP8NC70Z- STP8NC70ZFP
STB8NC70Z- STB8NC70Z-1N-CHANNEL 700V- 0.90Ω - 6.8A TO-220/FP/D2 PAK/I2 PAK
Zener-Protected PowerMESH™III MOSFET
(1)ISD ≤6.8A, di/dt ≤100A/μs, VDD≤ V(BR)DSS,Tj≤ TJMAX
.(*)Pulse width Limitedby maximum temperature allowed TYPICAL RDS(on)= 0.9Ω EXTREMELY HIGH dv/dt AND CAPABILITY
GATE-TO- SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW GATE INPUT RESISTANCE GATE CHARGE MINIMIZED
DESCRIPTIONThe third generationof MESH OVERLAY™ Power
MOSFETs for very high voltage exhibits unsurpassed
on-resistance per unit area while integrating back-to-
back Zener diodes between gate and source. Such ar-
rangement gives extra ESD capability with higher rug-
gedness performanceas requestedbya large variety single-switch applications.
APPLICATIONS SINGLE-ENDED SMPSIN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION WELDING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS(•)Pulse width limitedby safe operating area
STP8NC70Z- STP8NC70ZFP- STB8NC70Z- STB8NC70Z-12/13
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE=25°C UNLESS OTHERWISE SPECIFIED)
OFF (1)
DYNAMIC
3/13
STP8NC70Z- STP8NC70ZFP- STB8NC70Z- STB8NC70Z-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
GATE-SOURCE ZENER DIODE
Note:1. Pulsed: Pulse duration=300μs, duty cycle1.5%. Pulse width limitedby safe operating area. ΔVBV= αT(25°-T) BVGSO(25°)
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically been designedto enhance not only the device’s
ESD capability, but alsoto make them safely absorb possible voltage transients that may occasionally applied from gateto source.In this respect the Zener voltageis appropriateto achievean efficient
and cost-effective interventionto protect the device’s integrity. These integrated Zener diodes thus avoid
the usageof external components.
STP8NC70Z- STP8NC70ZFP- STB8NC70Z- STB8NC70Z-14/13
Output Characteristics
Safe Operating Area For TO-220FPSafe Operating Area For TO-220/D²PAK/I²PAK
Thermal Impedance For TO-220/D²PAK/I²PAK
Transfer Characteristics
5/13
STP8NC70Z- STP8NC70ZFP- STB8NC70Z- STB8NC70Z-1
Normalized Gate Threshold Voltagevs Temp. Normalized On Resistancevs Temperature
Gate Chargevs Gate-source Voltage Capacitance Variations
Static Drain-source On ResistanceTransconductance
STP8NC70Z- STP8NC70ZFP- STB8NC70Z- STB8NC70Z-16/13
Source-drain Diode Forward Characteristics
7/13
STP8NC70Z- STP8NC70ZFP- STB8NC70Z- STB8NC70Z-1
Fig.5: Test For Inductive
Fig.4: Gate Charge test Circuit
Fig.3: Switching
Resistive Load
