STP8NC60FP ,N-CHANNEL 600V 0.85 OHM 7A TO-220/TO-220FP POWERMESH II MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STP8NC70Z ,N-CHANNEL 700V 0.90 OHM 6.8A TO-220/TO-220FP/I2PAK ZENER-PROTECTED POWERMESH III MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STP8NC70ZFP ,N-CHANNEL 700V 0.90 OHM 6.8A TO-220/TO-220FP/I2PAK ZENER-PROTECTED POWERMESH III MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP(B)8NC70Z(-1) STP8NC70ZFPV Drain-source Volta ..
STP8NK100Z ,N-CHANNEL 1000VAbsolute maximum ratingsSymbol Parameter Value UnitTO-220 TO-220FPV Drain-source Voltage (V =0)1000 ..
STP8NK80Z ,N-CHANNEL 800VFEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically bee ..
STP8NK80ZFP ,N-CHANNEL 800VSTP8NK80Z - STP8NK80ZFPSTW8NK80ZN-CHANNEL 800V - 1.3Ω - 6.2A TO-220/TO-220FP/TO-247Zener-Protected ..
T0816-TCQ ,3Features Current-controlled Output Current Source, 3 Input Channels Low-power Consumption Output ..
T0820 ,4-channel laser driver with RF oscillatorFeatures• Current-controlled Output Current Source with 4 Input Channels• Low-power Consumption• Ou ..
T0905 ,General-purpose VHF/UHF Power Amplifier (135 to 600 MHz)Applications Professional PhonesGeneral- Hands-free Sets ISM Band Application Wireless Infrastr ..
T0980 ,SiGe Transmit/Receive Front-end ICFeatures• Power Amplifier with High Power Added Efficient (PAE), P Typically 29 dBmout• Controlled ..
T1001NL , TELECOMMUNICATIONS PRODUCTS
T1005 , TELECOMMUNICATIONS PRODUCTS
STP8NC60-STP8NC60FP
N-CHANNEL 600V 0.85 OHM 7A TO-220/TO-220FP POWERMESH II MOSFET
1/9July 2001
STP8NC60
STP8NC60FPN-CHANNEL 600V - 0.85Ω - 7A TO-220/TO-220FP
PowerMesh™II MOSFET TYPICAL RDS(on) = 0.85Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
DESCRIPTIONThe PowerMESH™II is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVES
ABSOLUTE MAXIMUM RATINGS(•)Pulse width limited by safe operating area
(*) Limited only by maximum temperature allowed
(1)ISD ≤7A, di/dt ≤100A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
STP8NC60/STP8NC60FP
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF (1)
DYNAMIC
3/9
STP8NC60/STP8NC60FP
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
Safe Operating Area for TO-220FPSafe Operating Area for TO-220
STP8NC60/STP8NC60FP
Thermal Impedance for TO-220FPThermal Impedance for TO-220
Static Drain-source On ResistanceTransconductance
Transfer CharacteristicsOutput Characteristics
5/9
STP8NC60/STP8NC60FP
Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature
Capacitance VariationsGate Charge vs Gate-source Voltage
Source-drain Diode Forward Characteristics
STP8NC60/STP8NC60FP
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For Resistive Load
