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STP8NC50 |STP8NC50ST N/a25000avaiN-CHANNEL 500V
STP8NC50FPSTN/a100avaiN-CHANNEL 500V


STP8NC50 ,N-CHANNEL 500VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP(B)8NC50(-1) STP8NC50FPV Drain-source Voltage ..
STP8NC50FP ,N-CHANNEL 500VELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STP8NC60 ,N-CHANNEL 600V 0.85 OHM 7A TO-220/TO-220FP POWERMESH II MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP8NC60 STP8NC60FPV Drain-source Voltage (V = 0 ..
STP8NC60FP ,N-CHANNEL 600V 0.85 OHM 7A TO-220/TO-220FP POWERMESH II MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STP8NC70Z ,N-CHANNEL 700V 0.90 OHM 6.8A TO-220/TO-220FP/I2PAK ZENER-PROTECTED POWERMESH III MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STP8NC70ZFP ,N-CHANNEL 700V 0.90 OHM 6.8A TO-220/TO-220FP/I2PAK ZENER-PROTECTED POWERMESH III MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP(B)8NC70Z(-1) STP8NC70ZFPV Drain-source Volta ..
T0816-TCQ ,3Features Current-controlled Output Current Source, 3 Input Channels Low-power Consumption Output ..
T0820 ,4-channel laser driver with RF oscillatorFeatures• Current-controlled Output Current Source with 4 Input Channels• Low-power Consumption• Ou ..
T0905 ,General-purpose VHF/UHF Power Amplifier (135 to 600 MHz)Applications Professional PhonesGeneral- Hands-free Sets ISM Band Application Wireless Infrastr ..
T0980 ,SiGe Transmit/Receive Front-end ICFeatures• Power Amplifier with High Power Added Efficient (PAE), P Typically 29 dBmout• Controlled ..
T1001NL , TELECOMMUNICATIONS PRODUCTS
T1005 , TELECOMMUNICATIONS PRODUCTS


STP8NC50 -STP8NC50FP
N-CHANNEL 500V
1/10December 2000
STP8NC50 - STP8NC50FP
STB8NC50-1

N-CHANNEL 500V - 0.7Ω - 8A TO-220/TO-220FP/I2PAK
PowerMesh™II MOSFET TYPICAL RDS(on) = 0.7 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
DESCRIPTION

The PowerMESH™II is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVES
ABSOLUTE MAXIMUM RATINGS

(•)Pulse width limited by safe operating area
(*) Limited only by maximum temperature allowed
(1)ISD ≤8A, di/dt ≤100A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
STP8NC50/FP/STB8NC50-1
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF (1)
DYNAMIC
3/10
STP8NC50/FP/STB8NC50-1
ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
Safe Operating Area for TO-220/I2PAK Safe Operating Area for TO-220FP
STP8NC50/FP/STB8NC50-1
Transfer Characteristics
Thermal Impedence for TO-220FPThermal Impedence for TO-220/I2PAK
Output Characteristics
5/10
STP8NC50/FP/STB8NC50-1
Gate Charge vs Gate-source Voltage
STP8NC50/FP/STB8NC50-1
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For

Resistive Load
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