STP85NF55L ,N-CHANNEL 55VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 55 VDS GSV Drain- ..
STP8NA50 ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTP8NA50STP8NA50FIN - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTP8NA ..
STP8NC50 ,N-CHANNEL 500VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP(B)8NC50(-1) STP8NC50FPV Drain-source Voltage ..
STP8NC50FP ,N-CHANNEL 500VELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STP8NC60 ,N-CHANNEL 600V 0.85 OHM 7A TO-220/TO-220FP POWERMESH II MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP8NC60 STP8NC60FPV Drain-source Voltage (V = 0 ..
STP8NC60FP ,N-CHANNEL 600V 0.85 OHM 7A TO-220/TO-220FP POWERMESH II MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
T0816-TCQ ,3Features Current-controlled Output Current Source, 3 Input Channels Low-power Consumption Output ..
T0820 ,4-channel laser driver with RF oscillatorFeatures• Current-controlled Output Current Source with 4 Input Channels• Low-power Consumption• Ou ..
T0905 ,General-purpose VHF/UHF Power Amplifier (135 to 600 MHz)Applications Professional PhonesGeneral- Hands-free Sets ISM Band Application Wireless Infrastr ..
T0980 ,SiGe Transmit/Receive Front-end ICFeatures• Power Amplifier with High Power Added Efficient (PAE), P Typically 29 dBmout• Controlled ..
T1001NL , TELECOMMUNICATIONS PRODUCTS
T1005 , TELECOMMUNICATIONS PRODUCTS
STP85NF55L
N-CHANNEL 55V
1/10September 2002
STB85NF55L
STP85NF55LN-CHANNEL 55V - 0.0060 Ω - 80A D2 PAK/TO-220
STripFET™ II POWER MOSFET TYPICAL RDS(on) = 0.0060 Ω LOW THRESHOLD DRIVE LOGIC LEVEL DEVICE
DESCRIPTIONThis Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS SOLENOID AND RELAY DRIVERS MOTOR CONTROL, AUDIO AMPLIFIERS DC-DC CONVERTERS AUTOMOTIVE ENVIRONMENT
Ordering Information
ABSOLUTE MAXIMUM RATINGS(•) Current Limited by Package.
(••) Pulse width limited by safe operating area.
1) ISD ≤80A, di/dt ≤300A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(2) Starting Tj = 25 oC, ID = 40A, VDD = 30V
INTERNAL SCHEMATIC DIAGRAM
STB85NF55L STP85NF55L
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)OFF
ON (*)
DYNAMIC
3/10
STB85NF55L STP85NF55LSWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ELECTRICAL CHARACTERISTICS (continued)
STB85NF55L STP85NF55LTransfer CharacteristicsOutput Characteristics
5/10
STB85NF55L STP85NF55L .
Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature .
STB85NF55L STP85NF55L
Fig. 1: Unclamped Inductive Load Test CircuitFig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
