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STB80NF55-06 |STB80NF5506STN/a633avaiN-CHANNEL 55V
STP80NF55-06 |STP80NF5506STN/a500avaiN
STP80NF55-06FP |STP80NF5506FPSTN/a5000avaiN-CHANNEL 55V


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STB80NF55-06-STP80NF55-06-STP80NF55-06FP
N-CHANNEL 55V
1/11September 2002
STB80NF55-06
STP80NF55-06 STP80NF55-06FP

N-CHANNEL 55V - 0.005 Ω - 80A TO-220/TO-220FP/D2 PAK
STripFET™ II POWER MOSFET TYPICAL RDS(on) = 0.005 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED
CHARACTERIZATION SURFACE-MOUNTING D2PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
DESCRIPTION

This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
HIGH-EFFICIENCY DC-DC CONVERTERS UPS AND MOTOR CONTROL DC-DC CONVERTERS AUTOMOTIVE ENVIRONMENT
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS

(•) Pulse width limited by safe operating area. (1) ISD ≤80A, di/dt ≤400A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(2) Starting Tj = 25 oC, ID = 40A, VDD= 35V
STB80NF55-06 STP80NF55-06 STP80NF55-06FP
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)

OFF
ON (*)
DYNAMIC
3/11
STB80NF55-06 STP80NF55-06 STP80NF55-06FP

SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ELECTRICAL CHARACTERISTICS (continued)
STB80NF55-06 STP80NF55-06 STP80NF55-06FP
Thermal Impedance Thermal Impedance for TO-220FP
5/11
STB80NF55-06 STP80NF55-06 STP80NF55-06FP

Gate Charge vs Gate-source Voltage Capacitance Variations
Fig. 3: Switching Times Test Circuits For Resistive
Load
Fig. 4: Gate Charge test Circuit

And Diode Recovery Times
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