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STP80NF06ST,STN/a14000avaiN-CHANNEL 60V


STP80NF06 ,N-CHANNEL 60VELECTRICAL CHARACTERISTICS (T =25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condit ..
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STP80NF10. ,N-CHANNEL 100VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP80NF10 STP80NF10FPV Drain-source Voltage (V = ..
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STP80NF06
N-CHANNEL 60V
1/10March 2004
STP80NF06- STB80NF06
STW80NF06

N-CHANNEL 60V- 0.0065Ω - 80A TO-220/D2 PAK/TO-247
STripFET™II POWER MOSFET TYPICAL RDS(on)= 0.0065Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW THRESHOLD DRIVE
DESCRIPTION

This Power MOSFETis the latest developmentof
STMicroelectronics unique "Single Feature Size™"
strip-based process. The resulting transistor shows
extremely high packing density for low on-resis-
tance, rugged avalanche characteristics and less
critical alignment steps therefore a remarkable
manufacturing reproducibility.
APPLICATIONS
DC-AC& DC-DC CONVERTERS HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS MOTOR CONTROL, AUDIO AMPLIFIERS
ORDER CODES
STP80NF06- STB80NF06- STW80NF06
2/10
ABSOLUTE MAXIMUM RATINGS
) Pulse width limitedby safe operating area
(1) StartingTj =25°C,ID =40A, VDD =40V
(*) Current Limitedby wire bonding
THERMAL DATA
ELECTRICAL CHARACTERISTICS
(TCASE =25°C UNLESS OTHERWISE SPECIFIED)
OFF (1)
DYNAMIC
3/10
STP80NF06- STB80NF06- STW80NF06
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration=300µs, duty cycle1.5%. Pulse width limitedby safe operating area.
Thermal ImpedanceSafe Operating Area
STP80NF06- STB80NF06- STW80NF06
4/10
Gate Chargevs Gate-source Voltage
Tranconductance
Output Characteristics
Capacitance Variations
Tranfer Characteristics
5/10
STP80NF06- STB80NF06- STW80NF06
NormalizedBreakdownVoltagevs Temperature
Normalized On Resistancevs Temperature
Source-drain Diode Forward Characteristics
STP80NF06- STB80NF06- STW80NF06
6/10
Fig.5:
Test For Inductive
Fig.4:
Gate Charge test Circuit
Fig.3:
Switching
Resistive Load
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