STP80NF03 Fast Delivery |IC PHOENIX CO.,LIMITED

STP80NF03 ,N-CHANNEL 30VELECTRICAL CHARACTERISTICS (T =25 C unless otherwisespecified)caseOFFSymbol Parameter Test Conditio ..
STP80NF03L ,N-CHANNEL 30VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0)30 VDS GSV Drain-ga ..
STP80NF03L-04 ,N-CHANNEL 30VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)30 VDS GSV Drain-g ..
STP80NF06 ,N-CHANNEL 60VELECTRICAL CHARACTERISTICS (T =25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condit ..
STP80NF10 ,N-CHANNEL 100VSTP80NF10STP80NF10FPN-CHANNEL 100V - 0.012Ω - 80A TO-220/TO-220FPLOW GATE CHARGE STripFET™II POWER ..
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T0800-PJQ ,5-CHANNEL LASER DRIVER WITH RF OSCILLATOR AND 2 OUTPUTSFeatures• Current-controlled Output Current Source with 5 Input Channels 2 Selectable Outputs for ..
T0806 ,3-channel laser driver with RF oscillator and 2 outputsApplications DVD-ROM with CD-RW Capability (Combo Drives)and 2 Outputs Combo Drives with CD and D ..
T0806 ,3-channel laser driver with RF oscillator and 2 outputsFeatures Current-controlled Output Current Source, 3 Input Channels Two Selectable Outputs for Gr ..
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T0816 ,3-channel laser driver with RF oscillatorFeatures Current-controlled Output Current Source, 3 Input Channels Low-power Consumption Output ..
T0816-TCQ ,3Features Current-controlled Output Current Source, 3 Input Channels Low-power Consumption Output ..

STP80NF03
N-CHANNEL 30V
STP80NF03L-04
N-CHANNEL 30V- 0.0034 Ω - 80A TO-220
STripFET POWER MOSFET
PRELIMINARY DATA TYPICAL RDS(on)= 0.0034Ω EXCEPTIONAL dv/dtCAPABILITY 100%AVALANCHE TESTED LOW GATE CHARGE 100oC APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power Mosfetis the latest developmentof
STMicroelectronics unique ”Single Feature
Size” strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalance
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS MOTOR CONTROL, AUDIO AMPLIFIERS DC-DC& DC-AC CONVERTERS AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
November 1999
TYPE VDSS RDS(on) ID
STP80NF03L-04 30V < 0.004Ω 80A2
TO-220
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS =0) 30 V
VDGR Drain- gate Voltage (RGS =20 kΩ)30 V
VGS Gate-source Voltage ±20 V
ID(••) Drain Current (continuous)atTc =25o C80 A Drain Current (continuous)atTc= 100o C56 A
IDM(•) Drain Current (pulsed) 320 A
Ptot Total DissipationatTc =25oC 210 W
Derating Factor 1.43 W/oC
EAS(1) Single Pulse Avalanche Energy 2 J
Tstg Storage Temperature -65to 175 oC Max. Operating Junction Temperature 175 oC
(•) Pulse width limitedby safe operating area (••) Current limitedby package (1) starting Tj =25o C,ID =40A,VDD =15V
1/6
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
300 C/W
oC/W C/WC
ELECTRICAL CHARACTERISTICS (Tcase =25oC unless otherwisespecified)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source
Breakdown Voltage =250 μAVGS =0 30 V
IDSS Zero Gate Voltage
Drain Current (VGS =0)
VDS =Max Rating
VDS =Max Rating Tc =125oC
IGSS Gate-body Leakage
Current (VDS =0)
VGS= ± 20V ± 100 nA(∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VGS(th) Gate Threshold Voltage VDS =VGS ID= 250 μA1 1.7 2.5 V
RDS(on) Static Drain-source On
Resistance
VGS =10V ID =40A
VGS =4.5V ID =40A
ID(on) On State Drain Current VDS >ID(on) xRDS(on)max
VGS =10V A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (∗)Forward
Transconductance
VDS >ID(on) xRDS(on)max ID =15A 50 S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS= 25Vf= 1MHz VGS=0 7000
STP80NF03L-04
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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on)
Turn-on Delay Time
Rise Time
VDD =15V ID =40A =4.7 Ω VGS =4.5V
(Resistive Load, see fig.3)
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD =24VID =80A VGS= 4.5V 120
160 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(off)
Turn-off Delay Time
Fall Time
VDD =15V ID =40A =4.7 Ω VGS =4.5V
(Resistive Load, see fig.3)
tr(Voff)
Off-voltage Rise Time
Fall Time
Cross-over Time
Vclamp =24V ID =80A =4.7 Ω VGS =4.5V
(Inductive Load, see fig.5)
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISD
ISDM(•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗)Forward On Voltage ISD =80A VGS =0 1.5 V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD=80A di/dt= 100 A/μs
VDD =20V Tj =150oC
(see test circuit, fig.5)
(∗) Pulsed: Pulse duration= 300μs, duty cycle 1.5%
(•) Pulse width limitedby safe operating area
STP80NF03L-04
3/6
Fig.1: Unclamped Inductive Load Test Circuit
Fig.3: Switching Times Test Circuits For
Resistive Load
Fig.2: Unclamped Inductive Waveform
Fig.4: Gate Chargetest Circuit
Fig.5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
STP80NF03L-04
4/6
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX. 4.40 4.60 0.173 0.181 1.23 1.32 0.048 0.051 2.40 2.72 0.094 0.107 1.27 0.050 0.49 0.70 0.019 0.027 0.61 0.88 0.024 0.034 1.14 1.70 0.044 0.067 1.14 1.70 0.044 0.067 4.95 5.15 0.194 0.203 2.4 2.7 0.094 0.106 10.0 10.40 0.393 0.409 16.4 0.645 13.0 14.0 0.511 0.551 2.65 2.95 0.104 0.116 15.25 15.75 0.600 0.620 6.2 6.6 0.244 0.260 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
Dia.
TO-220 MECHANICAL DATA
P011C
STP80NF03L-04
5/6
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subjectto change without notice. This publicationsupersedes andreplacesall information previouslysupplied. STMicroelectronicsproducts
arenot authorizedfor useas critical componentsin lifesupportdevicesor systemswithout express written approvalof STMicroelectronics.
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STP80NF03L-04
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Partno	Mfg	Dc	Qty	Available	Descript
STP80NF03 \|STP80NF03	ST	N/a	474	avai	N-CHANNEL 30V