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Partno	Mfg	Dc	Qty	Available	Descript
STP80NE06-10 \|STP80NE0610	ST	N/a	21	avai	N

STP80NE06-10 ,NSTP80NE06-10N - CHANNEL ENHANCEMENT MODE" SINGLE FEATURE SIZE™ " POWER MOSFETTYPE V R IDSS DS(on) D ..
STP80NF03 ,N-CHANNEL 30VELECTRICAL CHARACTERISTICS (T =25 C unless otherwisespecified)caseOFFSymbol Parameter Test Conditio ..
STP80NF03L ,N-CHANNEL 30VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0)30 VDS GSV Drain-ga ..
STP80NF03L-04 ,N-CHANNEL 30VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)30 VDS GSV Drain-g ..
STP80NF06 ,N-CHANNEL 60VELECTRICAL CHARACTERISTICS (T =25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condit ..
STP80NF10 ,N-CHANNEL 100VSTP80NF10STP80NF10FPN-CHANNEL 100V - 0.012Ω - 80A TO-220/TO-220FPLOW GATE CHARGE STripFET™II POWER ..
T0800-PJQ ,5-CHANNEL LASER DRIVER WITH RF OSCILLATOR AND 2 OUTPUTSFeatures• Current-controlled Output Current Source with 5 Input Channels 2 Selectable Outputs for ..
T0806 ,3-channel laser driver with RF oscillator and 2 outputsApplications DVD-ROM with CD-RW Capability (Combo Drives)and 2 Outputs Combo Drives with CD and D ..
T0806 ,3-channel laser driver with RF oscillator and 2 outputsFeatures Current-controlled Output Current Source, 3 Input Channels Two Selectable Outputs for Gr ..
T0806-TCQ ,3 CHANNEL LASER DRIVER WITH RF OSCILLATOR AND 2 OUTPUTSFeatures Current-controlled Output Current Source, 3 Input Channels Two Selectable Outputs for Gr ..
T0816 ,3-channel laser driver with RF oscillatorFeatures Current-controlled Output Current Source, 3 Input Channels Low-power Consumption Output ..
T0816-TCQ ,3Features Current-controlled Output Current Source, 3 Input Channels Low-power Consumption Output ..

STP80NE06-10
N
STP80NE06-10
N - CHANNEL ENHANCEMENT MODE
" SINGLE FEATURE SIZE " POWER MOSFET TYPICAL RDS(on) = 0.0085 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power MOSFET is the latest development of
SGS-THOMSON unique "Single Feature Size"
strip-based process. The resulting transistor
shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a
remarkable manufacturing reproducibility.
APPLICATIONS SOLENOID AND RELAY DRIVERS MOTOR CONTROL, AUDIO AMPLIFIERS DC-DC CONVERTERS AUTOMOTIVE ENVIRONMENT
February 1998
ABSOLUTE MAXIMUM RATINGS
(•) Pulse width limited by safe operating area (1) ISD ≤ 80 A, di/dt ≤ 300 A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/8
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
STP80NE06-10
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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area for Thermal Impedance
STP80NE06-10
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Output Characteristics
Transconductance
Gate Charge vs Gate-source Voltage
Transfer Characteristics
Static Drain-source On Resistance
Capacitance Variations
STP80NE06-10
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Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
STP80NE06-10
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Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 2: Unclamped Inductive Waveform
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
STP80NE06-10
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