Home ›  S › S108 > STP75NS04Z,N-channel clamped, 7 mOhm, 80 A, TO-220 fully protected MESH Overlay(TM) III Power MOSFET

STP75NS04Z Fast Delivery,Good Price
Part Number:

If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email

Partno	Mfg	Dc	Qty	Available	Descript
STP75NS04Z	STM	N/a	50	avai	N-channel clamped, 7 mOhm, 80 A, TO-220 fully protected MESH Overlay(TM) III Power MOSFET

STP75NS04Z ,N-channel clamped, 7 mOhm, 80 A, TO-220 fully protected MESH Overlay(TM) III Power MOSFETAbsolute maximum ratingsSymbol Parameter Value UnitV Drain-source voltage (V = 0)Clamped VDS GSV Dr ..
STP7NA40 ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTP7NA40STP7NA40FIN - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTP7NA ..
STP7NA40FI ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTP7NA40STP7NA40FIN - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTP7NA ..
STP7NB30FP ,N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFETSTP7NB30STP7NB30FP®N - CHANNEL 300V - 0.75Ω - 7A - TO-220/TO-220FPPowerMESH™ MOSFETTYPE V R IDSS D ..
STP7NB40FP ,N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFETSTP7NB40STP7NB40FP®N - CHANNEL ENHANCEMENT MODEPowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTP7NB40 400 ..
STP7NB60 ,N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFETSTP7NB60STP7NB60FPN - CHANNEL ENHANCEMENT MODEPowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTP7NB60 600 ..
T0790 ,700 MHz to 2700 MHz Direct Quadrature ModulatorBlock Diagram 16BBQ-1BBQ+4 13LO+ RF+0°12590°LO- RF-8BBI+9BBI-Rev. 4555C–SIGE–11/03Pin Configuration ..
T0800-PJQ ,5-CHANNEL LASER DRIVER WITH RF OSCILLATOR AND 2 OUTPUTSFeatures• Current-controlled Output Current Source with 5 Input Channels 2 Selectable Outputs for ..
T0806 ,3-channel laser driver with RF oscillator and 2 outputsApplications DVD-ROM with CD-RW Capability (Combo Drives)and 2 Outputs Combo Drives with CD and D ..
T0806 ,3-channel laser driver with RF oscillator and 2 outputsFeatures Current-controlled Output Current Source, 3 Input Channels Two Selectable Outputs for Gr ..
T0806-TCQ ,3 CHANNEL LASER DRIVER WITH RF OSCILLATOR AND 2 OUTPUTSFeatures Current-controlled Output Current Source, 3 Input Channels Two Selectable Outputs for Gr ..
T0816 ,3-channel laser driver with RF oscillatorFeatures Current-controlled Output Current Source, 3 Input Channels Low-power Consumption Output ..

---

STP75NS04Z
N-channel clamped, 7 mOhm, 80 A, TO-220 fully protected MESH Overlay(TM) III Power MOSFET
June 2006 Rev 1 1/12
STP75NS04Z
N-channel Clamped - 7mΩ - 80A - TO-220
Fully protected MESH Overlay™ III Power MOSFET
General features Low capacitance and gate charge 100% avalanche tested 175°C maximum junction temperature
Description
This fully clamped MOSFET is produced by using
the latest advanced Company’s Mesh Overlay
process which is based on a novel strip layout.
The inherent benefits of a new technology
coupled with the extra clamping capabilities make
this product particularly suitable for the harshest
operation conditions such as those encoured in
power tools. Any other application requiring extra
ruggedness is also recommended.
Applications Switching application Power tools
Internal schematic diagram

Order codes
Contents STP75NS04Z
2/12
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
STP75NS04Z Electrical ratings
3/12
1 Electrical ratings
Table 1. Absolute maximum ratings Current limited by wire bonding Pulse with limited by safe operating area
Table 2. Thermal data
Table 3. Avalanche data
Electrical characteristics STP75NS04Z
4/12
2 Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4. On/off states
Table 5. Dynamic Pulsed: pulse duration=300µs, duty cycle 1.5%
STP75NS04Z Electrical characteristics
5/12
Table 6. Switching on/off
Table 7. Source drain diode Pulse width limited by safe operating area Pulsed: pulse duration=300µs, duty cycle 1.5%
Electrical characteristics STP75NS04Z
6/12
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Thermal impedance
Figure 3. Output characterisics Figure 4. Transfer characteristics
Figure 5. Normalized B VDSS vs temperature Figure 6. Static drain-source on resistance