STP75NF75L ,N-CHANNEL 75VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 75 VDS GSV Drain- ..
STP75NS04Z ,N-channel clamped, 7 mOhm, 80 A, TO-220 fully protected MESH Overlay(TM) III Power MOSFETAbsolute maximum ratingsSymbol Parameter Value UnitV Drain-source voltage (V = 0)Clamped VDS GSV Dr ..
STP7NA40 ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTP7NA40STP7NA40FIN - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTP7NA ..
STP7NA40FI ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTP7NA40STP7NA40FIN - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTP7NA ..
STP7NB30FP ,N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFETSTP7NB30STP7NB30FP®N - CHANNEL 300V - 0.75Ω - 7A - TO-220/TO-220FPPowerMESH™ MOSFETTYPE V R IDSS D ..
STP7NB40FP ,N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFETSTP7NB40STP7NB40FP®N - CHANNEL ENHANCEMENT MODEPowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTP7NB40 400 ..
T0790 ,700 MHz to 2700 MHz Direct Quadrature ModulatorBlock Diagram 16BBQ-1BBQ+4 13LO+ RF+0°12590°LO- RF-8BBI+9BBI-Rev. 4555C–SIGE–11/03Pin Configuration ..
T0800-PJQ ,5-CHANNEL LASER DRIVER WITH RF OSCILLATOR AND 2 OUTPUTSFeatures• Current-controlled Output Current Source with 5 Input Channels 2 Selectable Outputs for ..
T0806 ,3-channel laser driver with RF oscillator and 2 outputsApplications DVD-ROM with CD-RW Capability (Combo Drives)and 2 Outputs Combo Drives with CD and D ..
T0806 ,3-channel laser driver with RF oscillator and 2 outputsFeatures Current-controlled Output Current Source, 3 Input Channels Two Selectable Outputs for Gr ..
T0806-TCQ ,3 CHANNEL LASER DRIVER WITH RF OSCILLATOR AND 2 OUTPUTSFeatures Current-controlled Output Current Source, 3 Input Channels Two Selectable Outputs for Gr ..
T0816 ,3-channel laser driver with RF oscillatorFeatures Current-controlled Output Current Source, 3 Input Channels Low-power Consumption Output ..
STP75NF75L
N-CHANNEL 75V
1/11April 2002
STP75NF75L
STB75NF75L STB75NF75L-1N-CHANNEL 75V - 0.009 Ω - 75A D2 PAK/I2 PAK/TO-220
STripFET™ II POWER MOSFET TYPICAL RDS(on) = 0.009Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW THRESHOLD DRIVE
DESCRIPTIONThis MOSFET series realized with STMicroelectronics
unique STripFET process has specifically been designed
to minimize input capacitance and gate charge. It is
therefore suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC converters for
Telecom and Computer applications. It is also intended
for any applications with low gate drive requirements.
APPLICATIONS SOLENOID AND RELAY DRIVERS DC MOTOR CONTROL DC-DC CONVERTERS AUTOMOTIVE ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS(•) Current limited by package
(••) Pulse width limited by safe operating area.
(1) ISD ≤ 75A, di/dt ≤ 500A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(2) Starting Tj = 25 oC, ID = 37.5A, VDD = 30V
INTERNAL SCHEMATIC DIAGRAM
STB75NF75L/-1 STP75NF75L
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)OFF
ON (*)
DYNAMIC
3/11
STB75NF75L/-1 STP75NF75LSWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ELECTRICAL CHARACTERISTICS (continued)
STB75NF75L/-1 STP75NF75L
5/11
STB75NF75L/-1 STP75NF75L .
Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature .
STB75NF75L/-1 STP75NF75L
Fig. 1: Unclamped Inductive Load Test CircuitFig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
