STP70NF03L ,N-CHANNEL 30VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)30 VDS GSV Drain-g ..
STP75NE75 ,N-CHANNEL 75VSTP75NE75STP75NE75FP®N - CHANNEL 75V - 0.01Ω - 75A TO-220/TO-220FPSTripFET™ POWER MOSFETTYPE V R ..
STP75NF20 ,N-channel 200 V, 0.028 Ohm typ., 75 A STripFET(TM) Power MOSFET in TO-220 packageAbsolute maximum ratingsSymbol Parameter Value UnitV Drain-source voltage (V = 0) 200 VDS GSV Gate- ..
STP75NF68 , N-channel 68 V, 0.010 OHM, 80 A, TO-220 STripFET II Power MOSFET
STP75NF75 ,N-CHANNEL 75VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STP75NF75. ,N-CHANNEL 75VSTB75NF75STP75NF75 STP75NF75FPN-CHANNEL 75V - 0.0095 Ω - 80A TO-220/TO-220FP/D²PAKSTripFET™ II POWE ..
T0790 ,700 MHz to 2700 MHz Direct Quadrature ModulatorBlock Diagram 16BBQ-1BBQ+4 13LO+ RF+0°12590°LO- RF-8BBI+9BBI-Rev. 4555C–SIGE–11/03Pin Configuration ..
T0800-PJQ ,5-CHANNEL LASER DRIVER WITH RF OSCILLATOR AND 2 OUTPUTSFeatures• Current-controlled Output Current Source with 5 Input Channels 2 Selectable Outputs for ..
T0806 ,3-channel laser driver with RF oscillator and 2 outputsApplications DVD-ROM with CD-RW Capability (Combo Drives)and 2 Outputs Combo Drives with CD and D ..
T0806 ,3-channel laser driver with RF oscillator and 2 outputsFeatures Current-controlled Output Current Source, 3 Input Channels Two Selectable Outputs for Gr ..
T0806-TCQ ,3 CHANNEL LASER DRIVER WITH RF OSCILLATOR AND 2 OUTPUTSFeatures Current-controlled Output Current Source, 3 Input Channels Two Selectable Outputs for Gr ..
T0816 ,3-channel laser driver with RF oscillatorFeatures Current-controlled Output Current Source, 3 Input Channels Low-power Consumption Output ..
STP70NF03L
N-CHANNEL 30V
1/9March 2001
STP70NF03L
STB70NF03L-1N-CHANNEL 30V - 0.008Ω - 70A TO-220/I2 PAK
LOW GATE CHARGE STripFET™ POWER MOSFET
(1) ISD ≤70A, di/dt ≤290A/μs, VDD =24 V ; Tj ≤ TJMAX. TYPICAL RDS(on) = 0.008 Ω TYPICAL Qg = 35 nC @ 10 V OPTIMAL RDS(on) x Qg TRADE-OFF CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED
DESCRIPTIONThis application specific Power Mosfet is the third
generation of STMicroelectronics unique “Single
Feature Size™” strip-based process. The result-
ing transistor shows the best trade-off between on-
resistance and gate charge. When used as high
and low side in buck regulators, it gives the best
performance in terms of both conduction and
switching losses. This is extremely important for
motherboards where fast switching and high effi-
ciency are of paramount importance.
APPLICATIONS SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY CPU CORE DC/DC
CONVERTERS
ABSOLUTE MAXIMUM RATINGS(�) Pulse width limited by safe operating area
STP70NF03L/STB70NF03L-1
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF (1)
DYNAMIC
3/9
STP70NF03L/STB70NF03L-1
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
Thermal ImpedenceSafe Operating Area
STP70NF03L/STB70NF03L-1
Gate Charge vs Gate-source Voltage
Transfer CharacteristicsOutput Characteristics
Transconductance Static Drain-source On Resistance
5/9
STP70NF03L/STB70NF03L-1
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
STP70NF03L/STB70NF03L-1
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For Resistive Load
