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STP6NC90Z |STP6NC90ZST N/a93avaiN-CHANNEL 900V


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STP6NC90Z
N-CHANNEL 900V
1/13July 2002
STP6NC90Z - STP6NC90ZFP
STB6NC90Z - STB6NC90Z-1

N-CHANNEL 900V - 1.55Ω - 5.4A TO-220/FP/D²PAK/I²PAK
Zener-Protected PowerMESH™III MOSFET TYPICAL RDS(on) = 1.55Ω EXTREMELY HIGH dv/dt AND CAPABILITY GATE
TO - SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW GATE INPUT RESISTANCE
DESCRIPTION

The third generation of MESH OVERLAY™ Power
MOSFETs for very high voltage exhibits unsurpassed
on-resistance per unit area while integrating back-to-
back Zener diodes between gate and source. Such ar-
rangement gives extra ESD capability with higher rug-
gedness performance as requested by a large variety
of single-switch applications.
APPLICATIONS
SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION WELDING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS

(•)Pulse width limited by safe operating area
(1)ISD ≤5.4A, di/dt ≤100A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(2).Limited only by maximum temperature allowed
STP6NC90Z/STP6NC90ZFP/STB6NC90Z/STB6NC90Z-1
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF
ON (1)
DYNAMIC
3/13
STP6NC90Z/STP6NC90ZFP/STB6NC90Z/STB6NC90Z-1
ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
GATE-SOURCE ZENER DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area. ΔVBV = αT (25°-T) BVGSO(25°)
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally
be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient
and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid
the usage of external components.
STP6NC90Z/STP6NC90ZFP/STB6NC90Z/STB6NC90Z-1
Safe Operating Area For TO-220/D²PAK/I²PAK Safe Operating Area For TO-220FP
Output Characteristics
Thermal Impedance For TO-220/D²PAK/I²PAK
5/13
STP6NC90Z/STP6NC90ZFP/STB6NC90Z/STB6NC90Z-1
Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature
Gate Charge vs Gate-source Voltage Capacitance Variations
Static Drain-source On ResistanceTransconductance
STP6NC90Z/STP6NC90ZFP/STB6NC90Z/STB6NC90Z-1
Source-drain Diode Forward Characteristics
7/13
STP6NC90Z/STP6NC90ZFP/STB6NC90Z/STB6NC90Z-1
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuits For

Resistive Load
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