STP6NC80ZFP ,N-CHANNEL 800V 1.5OHM 5.4A TO-220/TO-220FP/D2PAK/I2PAK/ ZENER-PROTECTED POWERMESH III MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP(B)6NC80Z(-1) STP6NC80ZFPV Drain-source Volta ..
STP6NC90Z ,N-CHANNEL 900VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP(B)6NC90Z(-1) STP6NC90ZFPV Drain-source Volta ..
STP6NK50Z ,N-CHANNEL 500VSTP6NK50Z - STF6NK50ZSTD6NK50ZN-CHANNEL 500V - 0.93Ω - 5.6A TO-220/TO-220FP/DPAKZener-Protected Sup ..
STP6NK60Z ,N-CHANNEL 600V 1 OHM 6A TO-220/TO-220FP/D2PAK ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP6NK60ZSTB6NK60Z STP6NK60ZFPSTB6NK60Z-1V Drain ..
STP6NK60ZFP ,N-CHANNEL 600V 1 OHM 6A TO-220/TO-220FP/D2PAK ZENER-PROTECTED SUPERMESH POWER MOSFETAPPLICATIONS■ HIGH CURRENT, HIGH SPEED SWITCHING■ IDEAL FOR OFF-LINE POWER SUPPLIES,ADAPTORS AND PF ..
STP6NK90Z ,N-CHANNEL 900V 1.75 OHM 5.8A TO-220/TO-220FP D2PAK ZENER-PROTECTED SUPERMESH POWER MOSFETSTP6NK90Z - STP6NK90ZFPSTB6NK90Z2N-CHANNEL 900V - 1.75Ω - 5.8A TO-220/TO-220FP/D PAKZener-Protected ..
T0790 ,700 MHz to 2700 MHz Direct Quadrature ModulatorBlock Diagram 16BBQ-1BBQ+4 13LO+ RF+0°12590°LO- RF-8BBI+9BBI-Rev. 4555C–SIGE–11/03Pin Configuration ..
T0800-PJQ ,5-CHANNEL LASER DRIVER WITH RF OSCILLATOR AND 2 OUTPUTSFeatures• Current-controlled Output Current Source with 5 Input Channels 2 Selectable Outputs for ..
T0806 ,3-channel laser driver with RF oscillator and 2 outputsApplications DVD-ROM with CD-RW Capability (Combo Drives)and 2 Outputs Combo Drives with CD and D ..
T0806 ,3-channel laser driver with RF oscillator and 2 outputsFeatures Current-controlled Output Current Source, 3 Input Channels Two Selectable Outputs for Gr ..
T0806-TCQ ,3 CHANNEL LASER DRIVER WITH RF OSCILLATOR AND 2 OUTPUTSFeatures Current-controlled Output Current Source, 3 Input Channels Two Selectable Outputs for Gr ..
T0816 ,3-channel laser driver with RF oscillatorFeatures Current-controlled Output Current Source, 3 Input Channels Low-power Consumption Output ..
STP6NC80Z -STP6NC80ZFP
N-CHANNEL 800V 1.5OHM 5.4A TO-220/TO-220FP/D2PAK/I2PAK/ ZENER-PROTECTED POWERMESH III MOSFET
1/13December 2002
STP6NC80Z- STP6NC80ZFP
STB6NC80Z- STB6NC80Z-1N-CHANNEL 800V- 1.5Ω - 5.4A TO-220/FP/D²PAK/I²PAK
Zener-Protected PowerMESH™III MOSFET TYPICAL RDS(on)= 1.5Ω EXTREMELY HIGH dv/dt AND CAPABILITY
GATE-TO- SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW GATE INPUT RESISTANCE GATE CHARGE MINIMIZED
DESCRIPTIONThe third generationof MESH OVERLAY™ Power
MOSFETs for very high voltage exhibits unsurpassed
on-resistance per unit area while integrating back-to-
back Zener diodes between gate and source. Such ar-
rangement gives extra ESD capability with higher rug-
gedness performanceas requestedbya large variety single-switch applications.
APPLICATIONS SINGLE-ENDED SMPSIN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION WELDING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS(•)Pulse width limitedby safe operating area
(1)ISD ≤5.4A, di/dt ≤100A/μs, VDD≤ V(BR)DSS,Tj≤ TJMAX
.(*)Pulse width Limitedby maximum temperature allowed
STP6NC80Z/FP/STP6NC80Z-12/13
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE=25°C UNLESS OTHERWISE SPECIFIED)
OFF (1)
DYNAMIC
3/13
STP6NC80Z/FP/STP6NC80Z-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
GATE-SOURCE ZENER DIODE
Note:1. Pulsed: Pulse duration=300μs, duty cycle1.5%. Pulse width limitedby safe operating area. ΔVBV= αT(25°-T) BVGSO(25°)
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically been designedto enhance not only the device’s
ESD capability, but alsoto make them safely absorb possible voltage transients that may occasionally applied from gateto source.In this respect the Zener voltageis appropriateto achievean efficient
and cost-effective interventionto protect the device’s integrity. These integrated Zener diodes thus avoid
the usageof external components.
STP6NC80Z/FP/STP6NC80Z-14/13
Safe Operating Area For TO-220FPSafe Operating Area For TO-220 /D²PAK/I²PAK
Thermal Impedance For TO-220 /D²PAK/I²PAK
Output Characteristics
5/13
STP6NC80Z/FP/STP6NC80Z-1
Capacitance Variations
Normalized On Resistancevs TemperatureNormalized
Gate Chargevs Gate-source Voltage
Static Drain-source On ResistanceTransconductance
6/13
STP6NC80Z/FP/STP6NC80Z-1
Source-drain Diode Forward Characteristics
7/13
STP6NC80Z/FP/STP6NC80Z-1
Fig.5: Test For Inductive
Fig.4: Gate Charge test Circuit
Fig.3: Switching
Resistive Load
