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Partno	Mfg	Dc	Qty	Available	Descript
STP65NF06	ST	N/a	12000	avai	N-channel 60 V, 0.0115 Ohm, 60 A, TO-220 STripFET(TM) II Power MOSFET
STP65NF06. |STP65NF06	ST	N/a	58	avai	N-channel 60 V, 0.0115 Ohm, 60 A, TO-220 STripFET(TM) II Power MOSFET

STP65NF06 ,N-channel 60 V, 0.0115 Ohm, 60 A, TO-220 STripFET(TM) II Power MOSFETElectrical characteristics(T =25°C unless otherwise specified)CASETable 3. On/off statesSymbol Para ..
STP65NF06. ,N-channel 60 V, 0.0115 Ohm, 60 A, TO-220 STripFET(TM) II Power MOSFETAbsolute maximum ratingsSymbol Parameter Value UnitV Drain-source voltage (V = 0) 60 VDS GSV Gate- ..
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T0-220 , Fit Rate / Equivalent Device Hours
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STP65NF06-STP65NF06.
N-channel 60 V, 0.0115 Ohm, 60 A, TO-220 STripFET(TM) II Power MOSFET
July 2006 Rev 1 1/14
STD65NF06
STP65NF06
N-channel 60V - 11.5mΩ - 60A - DP AK/TO-220 ripFET™ II Power MOSFET
General features Standard level gate drive 100% avalanche tested
Description
This Power MOSFET is the latest development of
STMicroelectronics unique “single feature size”™
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
Applications Switching application
Internal schematic diagram

Order codes
Contents STD65NF06 - STP65NF06
2/14
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
STD65NF06 - STP65NF06 Electrical ratings
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1 Electrical ratings
Table 1. Absolute maximum ratings Pulse width limited by safe operating area. ISD ≤ 60A, di/dt ≤ 300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Starting Tj = 25 °C, ID = 30A, VDD = 40V
Table 2. Thermal data When mounted on FR-4 of 1 inch², 2 oz Cu
Electrical characteristics STD65NF06 - STP65NF06
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2 Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 3. On/off states
Table 4. Dynamic Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
STD65NF06 - STP65NF06 Electrical characteristics
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Table 5. Source drain diode Pulse width limited by safe operating area. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Electrical characteristics STD65NF06 - STP65NF06
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2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Thermal impedance
Figure 3. Output characterisics Figure 4. Transfer characteristics
Figure 5. Normalized breakdown voltage
temperature
Figure 6. Static drain-source on resistance
STD65NF06 - STP65NF06 Electrical characteristics
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Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations
Figure 9. Normalized gate threshold voltage
vs temperature
Figure 10. Normalized on resistance vs
temperature
Figure 11. Source-drain diode forward
characteristics