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STP60NF10STN/a115000avaiN-CHANNEL 100V


STP60NF10 ,N-CHANNEL 100VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)100 VDS GSV Drain- ..
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STP65NF06. ,N-channel 60 V, 0.0115 Ohm, 60 A, TO-220 STripFET(TM) II Power MOSFETAbsolute maximum ratingsSymbol Parameter Value UnitV Drain-source voltage (V = 0) 60 VDS GSV Gate- ..
STP6A60 , Bi-Directional Triode Thyristor
STP6A60 , Bi-Directional Triode Thyristor
STP6N120K3 ,N-channel 1200 V, 1.95 Ohm, 6 A Zener-protected SuperMESH3(TM) Power MOSFET in TO-220 packageElectrical characteristics(T = 25 °C unless otherwise specified)CTable 4. On / off statesSymbol Par ..
T0-220 , Fit Rate / Equivalent Device Hours
T0-220 , Fit Rate / Equivalent Device Hours
T0790 ,700 MHz to 2700 MHz Direct Quadrature ModulatorBlock Diagram 16BBQ-1BBQ+4 13LO+ RF+0°12590°LO- RF-8BBI+9BBI-Rev. 4555C–SIGE–11/03Pin Configuration ..
T0800-PJQ ,5-CHANNEL LASER DRIVER WITH RF OSCILLATOR AND 2 OUTPUTSFeatures• Current-controlled Output Current Source with 5 Input Channels 2 Selectable Outputs for ..
T0806 ,3-channel laser driver with RF oscillator and 2 outputsApplications DVD-ROM with CD-RW Capability (Combo Drives)and 2 Outputs Combo Drives with CD and D ..
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STP60NF10
N-CHANNEL 100V
1/9November 2004
STP60NF10

N-CHANNEL 100V - 0.019 - 80A TO-220
STripFET™ II POWER MOSFET Package- TYPICAL RDS(on) = 0.019 EXTREMELY HIGHL dv/dt CAPABILITY 100% AVALANCHE TESTED
DESCRIPTION

This MOSFET series realized with STMicroelec-
tronics unique STripFET™ process has specifical-
ly been designed to minimize input capacitance
and gate charge. It is therefore suitable as primary
switch in advanced high-efficiency, high-frequency
isolated DC-DC converters for Telecom and Com-
puter applications. It is also intended for any appli-
cations with low gate drive requirements.
APPLICATIONS
HIGH EFFICIENCY DC/DC CONVERTERS,
INDUSTRIAL, AND LIGHTING EQUIPMENT. MOTOR CONTROL Ordering Information ABSOLUTE MAXIMUM RATINGS Pulse width limited by safe operating area.
(**) Current Limited by Package
(1) ISD 80A, di/dt 300A/µs, VDD V(BR)DSS, Tj TJMAX
(2) Starting Tj = 25 oC, ID = 40A, VDD = 30V 1
STP60NF10 THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF ON (*) DYNAMIC
3/9
STP60NF10
SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. Pulse width limited by safe operating area.
ELECTRICAL CHARACTERISTICS (continued)
STP60NF10
5/9
STP60NF10

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