STP5NK80ZFP ,N-CHANNEL 800V 1.9 OHM 4.3A TO-220/TO-220FP ZENER-PROTECTED SUPERMESH POWER MOSFETFEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically bee ..
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T0-220 , Fit Rate / Equivalent Device Hours
T0-220 , Fit Rate / Equivalent Device Hours
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STP5NK80Z-STP5NK80ZFP
N-CHANNEL 800V 1.9 OHM 4.3A TO-220/TO-220FP ZENER-PROTECTED SUPERMESH POWER MOSFET
1/10July 2002
STP5NK80Z - STP5NK80ZFPN-CHANNEL 800V - 1.9Ω - 4.3A TO-220/TO-220FP
Zener-Protected SuperMESH™Power MOSFET TYPICAL RDS(on) = 1.9 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTIONThe SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC LIGHTING
ORDERING INFORMATION
STP5NK80Z - STP5NK80ZFP
ABSOLUTE MAXIMUM RATINGS ) Pulse width limited by safe operating area
(1) ISD ≤4.3A, di/dt ≤200A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE(#) When mounted on minimum Footprint
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
3/10
STP5NK80Z - STP5NK80ZFP
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%
VDSS.
STP5NK80Z - STP5NK80ZFP
Transfer CharacteristicsOutput Characteristics
Safe Operating Area For TO-220 Safe Operating Area For TO-220FP
Thermal Impedance For TO-220 Thermal Impedance For TO-220FP
5/10
STP5NK80Z - STP5NK80ZFP
Gate Charge vs Gate-source Voltage
Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature
Static Drain-source On Resistance
Capacitance Variations
Transconductance
STP5NK80Z - STP5NK80ZFP
Normalized BVDSS vs TemperatureSource-drain Diode Forward Characteristics
Maximum Avalanche Energy vs Temperature
