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STP5NB40STN/a50avaiN-CHANNEL 400V 1.47 OHM 4.7A TO-220/TO-220FP POWERMESH MOSFET


STP5NB40 ,N-CHANNEL 400V 1.47 OHM 4.7A TO-220/TO-220FP POWERMESH MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP5NB40 STP5NB40FPV Drain-source Voltage (V = 0 ..
STP5NB60 ,N-CHANNEL 600VSTP5NB60STP5NB60FP®N - CHANNEL 600V - 1.8Ω - 5A - TO-220/TO-220FPPowerMESH™ MOSFETTYPE V R IDSS DS( ..
STP5NB60FP ,N-CHANNEL 600VSTP5NB60STP5NB60FP®N - CHANNEL 600V - 1.8Ω - 5A - TO-220/TO-220FPPowerMESH™ MOSFETTYPE V R IDSS DS( ..
STP5NB80 ,N-CHANNEL 800VSTP5NB80STP5NB80FP®N - CHANNEL 800V - 1.8Ω - 5A - TO-220/TO-220FPPowerMESH™ MOSFETTYPE V R IDSS DS( ..
STP5NB80FP , N - CHANNEL 800V - 1.8ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET
STP5NB90 ,NABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP5NB90 STP5NB90FPV Drain-source Voltage (V =0) ..
T0-220 , Fit Rate / Equivalent Device Hours
T0-220 , Fit Rate / Equivalent Device Hours
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T0806 ,3-channel laser driver with RF oscillator and 2 outputsApplications DVD-ROM with CD-RW Capability (Combo Drives)and 2 Outputs Combo Drives with CD and D ..
T0806 ,3-channel laser driver with RF oscillator and 2 outputsFeatures Current-controlled Output Current Source, 3 Input Channels Two Selectable Outputs for Gr ..


STP5NB40
N-CHANNEL 400V 1.47 OHM 4.7A TO-220/TO-220FP POWERMESH MOSFET
1/9June 2001
STP5NB40
STP5NB40FP

N-CHANNEL 400V - 1.47Ω - 4.7A TO-220/TO-220FP
PowerMesh™ MOSFET TYPICAL RDS(on) = 1.47 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
DESCRIPTION

Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprieraty edge termi-
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING
EQUIPMENT
ABSOLUTE MAXIMUM RATINGS

(•)Pulse width limited by safe operating area
(1)ISD ≤4.7A, di/dt ≤200A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*)Limited only by maximum temperature allowed
STP5NB40/FP
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF (1)
DYNAMIC
3/9
STP5NB40/FP
ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
Safe Operating Area for TO-220FPSafe Operating Area for TO-220
STP5NB40/FP
Thermal Impedence for TO-220
Output Characteristics
Transconductance Static Drain-source On Resistance
Thermal Impedence for TO-220FP
Transfer Characteristics
STP5NB40/FP
Source-drain Diode Forward Characteristics
Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature
Capacitance VariationsGate Charge vs Gate-source Voltage
STP5NB40/FP
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For

Resistive Load
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