STP5NB100FP ,N-CHANNEL 1000VELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STP5NB40 ,N-CHANNEL 400V 1.47 OHM 4.7A TO-220/TO-220FP POWERMESH MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP5NB40 STP5NB40FPV Drain-source Voltage (V = 0 ..
STP5NB60 ,N-CHANNEL 600VSTP5NB60STP5NB60FP®N - CHANNEL 600V - 1.8Ω - 5A - TO-220/TO-220FPPowerMESH™ MOSFETTYPE V R IDSS DS( ..
STP5NB60FP ,N-CHANNEL 600VSTP5NB60STP5NB60FP®N - CHANNEL 600V - 1.8Ω - 5A - TO-220/TO-220FPPowerMESH™ MOSFETTYPE V R IDSS DS( ..
STP5NB80 ,N-CHANNEL 800VSTP5NB80STP5NB80FP®N - CHANNEL 800V - 1.8Ω - 5A - TO-220/TO-220FPPowerMESH™ MOSFETTYPE V R IDSS DS( ..
STP5NB80FP , N - CHANNEL 800V - 1.8ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET
T0-220 , Fit Rate / Equivalent Device Hours
T0-220 , Fit Rate / Equivalent Device Hours
T0790 ,700 MHz to 2700 MHz Direct Quadrature ModulatorBlock Diagram 16BBQ-1BBQ+4 13LO+ RF+0°12590°LO- RF-8BBI+9BBI-Rev. 4555C–SIGE–11/03Pin Configuration ..
T0800-PJQ ,5-CHANNEL LASER DRIVER WITH RF OSCILLATOR AND 2 OUTPUTSFeatures• Current-controlled Output Current Source with 5 Input Channels 2 Selectable Outputs for ..
T0806 ,3-channel laser driver with RF oscillator and 2 outputsApplications DVD-ROM with CD-RW Capability (Combo Drives)and 2 Outputs Combo Drives with CD and D ..
T0806 ,3-channel laser driver with RF oscillator and 2 outputsFeatures Current-controlled Output Current Source, 3 Input Channels Two Selectable Outputs for Gr ..
STP5NB100-STP5NB100FP
N-CHANNEL 1000V
1/9May 2002
STP5NB100
STP5NB100FPN-CHANNEL 1000V - 2.4Ω - 5A TO-220/TO-220FP
PowerMesh™ MOSFET
(*)Limited only by maximum temperature allowed
(1)ISD ≤4.7A, di/dt ≤200A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. TYPICAL RDS(on) = 2.4 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
DESCRIPTIONUsing the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprieraty edge termi-
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOE WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS(•)Pulse width limited by safe operating area
STP5NB100 - STP5NB100FP
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF (1)
DYNAMIC
3/9
STP5NB100 - STP5NB100FP
Safe Operating Area for TO-220FP
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
Safe Operating Area for TO-220
STP5NB100 - STP5NB100FP
Thermal Impedence for TO-220
Transconductance Static Drain-source On Resistance
Transfer CharacteristicsOutput Characteristics
Thermal Impedence for TO-220FP
STP5NB100 - STP5NB100FP
Source-drain Diode Forward Characteristics
Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature
Capacitance VariationsGate Charge vs Gate-source Voltage
STP5NB100 - STP5NB100FP
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For Resistive Load
