STP5N90 ,N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORABSOLUTE MAXIMUM RATINGS
I_Symbol Parameter T Value Cunit"
L., - .0 STPSNQO l STP5N90FI "
'_VD ..
STP5NA50 ,Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-220STP5NA50STP5NA50FIN - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTP5NA ..
STP5NA80 ,Trans MOSFET N-CH 800V 4.7A 3-Pin(3+Tab) TO-220STP5NA80STP5NA80FIN - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTP5NA ..
STP5NB100 ,N-CHANNEL 1000VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP5NB100 STP5NB100FPV Drain-source Voltage (V = ..
STP5NB100FP ,N-CHANNEL 1000VELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STP5NB40 ,N-CHANNEL 400V 1.47 OHM 4.7A TO-220/TO-220FP POWERMESH MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP5NB40 STP5NB40FPV Drain-source Voltage (V = 0 ..
T0-220 , Fit Rate / Equivalent Device Hours
T0-220 , Fit Rate / Equivalent Device Hours
T0790 ,700 MHz to 2700 MHz Direct Quadrature ModulatorBlock Diagram 16BBQ-1BBQ+4 13LO+ RF+0°12590°LO- RF-8BBI+9BBI-Rev. 4555C–SIGE–11/03Pin Configuration ..
T0800-PJQ ,5-CHANNEL LASER DRIVER WITH RF OSCILLATOR AND 2 OUTPUTSFeatures• Current-controlled Output Current Source with 5 Input Channels 2 Selectable Outputs for ..
T0806 ,3-channel laser driver with RF oscillator and 2 outputsApplications DVD-ROM with CD-RW Capability (Combo Drives)and 2 Outputs Combo Drives with CD and D ..
T0806 ,3-channel laser driver with RF oscillator and 2 outputsFeatures Current-controlled Output Current Source, 3 Input Channels Two Selectable Outputs for Gr ..
STP5N90
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
r''''''""
"; diii'
SGSMMC0lNS0)Rl
[iei%)RCo)EilaEC'0'R(foyi%)S
STP5N90
STP5N90Flll
5631-85l
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE Voss RDS(on) Io
STP5N90 900 V < 2.4 n 5 A
STP5N90FI 900 V < 2.4 n 2.8 A
TYPICAL RDS(on) = 1.9 Q
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100°C
LOW INPUT CAPACITANCE
LOW GATE CHARGE
APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLIES (SMPS)
TO-220
ISOWATT220
. CONSUMER AND INDUSTRIAL LIGHTING
. DC-AC INVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLY (UPS)
ABSOLUTE MAXIMUM RATINGS
INTERNAL SCHEMATIC DIAGRAM
Symbol Parameter Value Unit
_ STPSNQO STP5N90FI
_ Vos Drain-source Voltage (VGs = O) 900 V
VDGR Drain- gate Voltage (Ros = 20 kn) 900 V
-._Vtss Gate-source Voltage : 20 V
In Drain Current (continuous) at Tc = 25 ''C 2.8 A
g 10 Drain Current (continuous) at Tc = 100 oc 1.7 A
|DM(-) Drain Current (pulsed) 20 20 A
Ptot Total Dissipation at Tc = 25 °C 125 40 W
Derating Factor 1 0.32 WPC
Ihso Insulation Withstand Voltage (DC) - 2000 V
Tsig Storage Temperature -65 to 150 °C
c.__Ti Max. Operating Junction Temperature 150 °C
(s) Pulse width limited by safe operating area
April1993 1/7
STP5N90/Fl
TH ERMAL DATA
_ 72-22: ISOWATT220 '
Rthj-case Thermal Resistance Junction-case Max 3
Rthi-amb Thermal Resistance Junction-ambient Max _,' S2.5
Rthc-sink Thermal Resistance Case-sink Typ E 0.5
T Maximum Lead Temperature For Soldering Purpose ' 300
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value
IAR Avalanche Current, Repetitive or Not-Repetitive 5
(pulse width limited by Ti max, 6 < 1%)
EAs Single Pulse Avalanche Energy 270
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
EAR Repetitive Avalanche Energy 13
(pulse width limited by Tj max, 6 < 1%)
IAR Avalanche Current, Repetitive or Not-Repetitive 3
(Tc = 100 °C, pulse width limited by T; max, 5 < 1%)
- '-----c.caiQ
ELECTRICAL CHARACTERISTICS (Tease = 25 oc unless otherwise -srcrc-sefe.d)
Symbol Parameter Test Conditions Min 5 Typ. MaxJIugE
V(anss Drain-source ID = 250 pA I/tss = o Cir l g 1 v
Breakdown Voltage ----4- _,__,,
loss Zero Gate Voltage VDs = Wax Rating 250 I "
Drain Current (Ves = 0) Vos = Max Rating x 0.8 Tc = 125 'C. 1009 1 WA-,,,
less Gate-body Leakage Vas = i 20 V i 100 ' n5
Current (Vos = 0) - 2 " a
ON (*)
Symbol Parameter Test Conditions Min Typ. Max. l UM!
Vesuh) Gate Threshold Voltage Vos = Vtss lo = 250 “A 2 I 3 4 j V
Roswn) Static Drain-source On Vas = 101/ lo = 2.5 A l 1.9 2 4 I ll i
Resistance VGs = 10V ID = 2.5 A TO = 10056 I _-d-i--'---,!,--------)
|D(on) On State Drain Current Vos > 1mm, x Rosmmx i5. 'i',' A i
Vas = 10 V _-'----------'
DYNAMIC
. . - ,' T Max. 5 UM 1
Symbol Parameter Test Conditions Min. yp. . S
gis (*) Forward VDs > |D(on) X RDS(on)max ID = 2.5, A 2 4 _, _
Transconductance _ rr-rr-i-r-e-ps-".
Ciss Input Capacitance V05: 25 V f: 1 MHz VGs = 0 1190 140500 I SF
Coss Output Capacitance 165 2 5 ' p;
Crss Reverse Transfer 70 8 T
Capacitance _-----'-----------"
2/7 ___.,------------------------------" L
Er, SGS-THOMSDH Ci
862 7] uncmcmmm sc-s" 'tii'
