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STP55NE06STN/a150avaiN-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
STP55NE06. |STP55NE06STN/a20avaiN-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET


STP55NE06 ,N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFETSTP55NE06STP55NE06FPN - CHANNEL ENHANCEMENT MODE" SINGLE FEATURE SIZE™ " POWER MOSFETTYPE V R IDSS ..
STP55NE06. ,N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFETSTP55NE06STP55NE06FPN - CHANNEL ENHANCEMENT MODE" SINGLE FEATURE SIZE™ " POWER MOSFETTYPE V R IDSS ..
STP55NE06FP ,NABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP55NE06 STP55NE06FPV Drain-source Voltage (V = ..
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STP55NF06FP ,N-CHANNEL 60V 0.017 OHM 50A TO-220/TO-220FP/I2PAK STRIPFET II POWER MOSFET
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T0-220 , Fit Rate / Equivalent Device Hours
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STP55NE06-STP55NE06.
N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
STP55NE06
STP55NE06FP

N - CHANNEL ENHANCEMENT MODE
" SINGLE FEATURE SIZE " POWER MOSFET TYPICAL RDS(on) = 0.019 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC HIGH dv/dt CAPABILITY APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION

This Power Mosfet is the latest development of
SGS-THOMSON unique "Single Feature Size"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalance characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
DC MOTOR CONTROL DC-DC & DC-AC CONVERTERS SYNCHRONOUS RECTIFICATION
ABSOLUTE MAXIMUM RATINGS

(•) Pulse width limited by safe operating area (1) ISD ≤ 55 A, di/dt ≤ 300 A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
January 1998
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THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Tcase = 25
o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
STP55NE06/FP

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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area for TO-220 Safe Operating Area for TO-220FP
STP55NE06/FP

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Thermal Impedance for TO-220
Output Characteristics
Transconductance
Thermal Impedance forTO-220FP
Transfer Characteristics
Static Drain-source On Resistance
STP55NE06/FP

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Gate Charge vs Gate-source Voltage
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Capacitance Variations
Normalized On Resistance vs Temperature
STP55NE06/FP

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Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits For

Resistive Load
Fig. 2: Unclamped Inductive Waveform
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching

And Diode Recovery Times
STP55NE06/FP

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