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STP50NF25STN/a50avaiN-channel 250 V, 0.055 Ohm, 45 A, TO-220 low gate charge STripFET(TM) Power MOSFET


STP50NF25 ,N-channel 250 V, 0.055 Ohm, 45 A, TO-220 low gate charge STripFET(TM) Power MOSFETElectrical characteristics(T =25°C unless otherwise specified)CASE Table 5. On/off statesSymbol Par ..
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STP50NF25
N-channel 250 V, 0.055 Ohm, 45 A, TO-220 low gate charge STripFET(TM) Power MOSFET
November 2007 Rev 4 1/14
STB50NF25
STP50NF25

N-channel 250V - 0.055Ω - 45A - D2P AK - TO-220
low gate charge ST ripFET™ Power MOSFET
Features
100% avalanche tested Gate charge minimized Low intrinsic capacitances
Application

Switching applications
Description

This Power MOSFET series realized with
STMicroelectronics unique STripFET™ process
has specifically been designed to minimize on-
resistance and gate charge. It is therefore suitable
as primary side switch allowing high efficiencies.
Figure 1. Internal schematic diagram


Table 1. Device summary
Contents STB50NF25 - STP50NF25
2/14
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
STB50NF25 - STP50NF25 Electrical ratings
3/14
1 Electrical ratings
Table 2. Absolute maximum ratings
Value limited by wire bonding Pulse width limited by safe operating area ISD ≤ 45 A, di/dt ≤ 200 A/µs, VDD = 80% V(BR)DSS
Table 3. Thermal data
Table 4. Avalanche data
Pulse width limited by Tjmax Starting TJ= 25 °C, ID = IAR, VDD = 50 V
Electrical characteristics STB50NF25 - STP50NF25
4/14
2 Electrical characteristics

(TCASE=25°C unless otherwise specified)
Table 5. On/off states
Table 6. Dynamic
Pulsed: pulse duration=300µs, duty cycle 1.5%
STB50NF25 - STP50NF25 Electrical characteristics
5/14
Table 7. Switching times
Table 8. Source drain diode
Electrical characteristics STB50NF25 - STP50NF25
6/14
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
Figure 4. Output characteristics Figure 5. Transfer characteristics
Figure 6. Normalized BVDSS vs temperature Figure 7. Static drain-source on resistance
STB50NF25 - STP50NF25 Electrical characteristics
7/14
Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations
Figure 10. Normalized gate threshold voltage
vs temperature
Figure 11. Normalized on resistance vs
temperature
Figure 12. Source-drain diode forward
characteristics

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