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STP4NC80ZSTN/a93avaiN-CHANNEL 800V 2.4 OHM 4A TO-220 TO-220FP I2PAK ZENER PROTECTED POWERMESH III MOSFET
STP4NC80ZFPSTN/a97avaiN-CHANNEL 800V 2.4 OHM 4A TO-220 TO-220FP D2PAK I2PAK ZENER PROTECTED POWERMESH III MOSFET


STP4NC80ZFP ,N-CHANNEL 800V 2.4 OHM 4A TO-220 TO-220FP D2PAK I2PAK ZENER PROTECTED POWERMESH III MOSFETELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ONSymbol Parameter Test Conditions Min. Typ. Max. U ..
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STP4NC80Z-STP4NC80ZFP
N-CHANNEL 800V 2.4 OHM 4A TO-220 TO-220FP D2PAK I2PAK ZENER PROTECTED POWERMESH III MOSFET
1/13December 2002
STP4NC80Z- STP4NC80ZFP
STB4NC80Z- STB4NC80Z-1

N-CHANNEL 800V- 2.4Ω - 4A TO-220/FP/D2 PAK/I2 PAK
Zener-Protected PowerMESH™III MOSFET
(1)ISD ≤4A, di/dt ≤100A/μs, VDD≤ V(BR)DSS,Tj≤ TJMAX
.(*)Pulse width Limitedby maximum temperature allowed� TYPICAL RDS(on)= 2.4Ω EXTREMELY HIGH dv/dt AND CAPABILITY
GATE-TO- SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW GATE INPUT RESISTANCE GATE CHARGE MINIMIZED
DESCRIPTION

The third generationof MESH OVERLAY™ Power
MOSFETs for very high voltage exhibits unsurpassed
on-resistance per unit area while integrating back-to-
back Zener diodes between gate and source. Such ar-
rangement gives extra ESD capability with higher rug-
gedness performanceas requestedbya large variety single-switch applications.
APPLICATIONS
SINGLE-ENDED SMPSIN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION WELDING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS

(•)Pulse width limitedby safe operating area
STP4NC80Z- STP4NC80ZFP- STB4NC80Z- STB4NC80Z-1
2/13
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(TCASE=25°C UNLESS OTHERWISE SPECIFIED)
OFF (1)
DYNAMIC
3/13
STP4NC80Z- STP4NC80ZFP- STB4NC80Z- STB4NC80Z-1
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
GATE-SOURCE ZENER DIODE
Note:1. Pulsed: Pulse duration=300μs, duty cycle1.5%. Pulse width limitedby safe operating area. ΔVBV= αT(25°-T) BVGSO(25°)
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designedto enhance not only the device’s
ESD capability, but alsoto make them safely absorb possible voltage transients that may occasionally applied from gateto source.In this respect the Zener voltageis appropriateto achievean efficient
and cost-effective interventionto protect the device’s integrity. These integrated Zener diodes thus avoid
the usageof external components.
STP4NC80Z- STP4NC80ZFP- STB4NC80Z- STB4NC80Z-1
4/13
Safe Operating Area For TO-220FPSafe Operating Area For TO-220/D²PAK/I²PAK
Output Characteristics
Thermal Impedance For TO-220/D²PAK/I²PAK
5/13
STP4NC80Z- STP4NC80ZFP- STB4NC80Z- STB4NC80Z-1
Normalized On Resistancevs TemperatureNormalized Gate Threshold Voltagevs Temp.
Capacitance VariationsGate Chargevs Gate-source Voltage
Static Drain-source On ResistanceTransconductance
STP4NC80Z- STP4NC80ZFP- STB4NC80Z- STB4NC80Z-1
6/13
Source-drain Diode Forward Characteristics
7/13
STP4NC80Z- STP4NC80ZFP- STB4NC80Z- STB4NC80Z-1
Fig.5:
Test For Inductive
Fig.4:
Gate Charge test Circuit
Fig.3:
Switching
Resistive Load
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