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Partno	Mfg	Dc	Qty	Available	Descript
STP4NB50	ST	N/a	42	avai	N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFET
STP4NB50FP	ST	N/a	99	avai	N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFET

STP4NB50FP ,N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFETSTP4NB50STP4NB50FP®N - CHANNEL ENHANCEMENT MODEPowerMESH™ MOSFETPRELIMINARY DATATYPE V R IDSS DS(o ..
STP4NB80 ,NSTP4NB80STP4NB80FP®N - CHANNEL 800V - 3Ω - 4A - TO-220/TO-220FPPowerMESH™ MOSFETTYPE V R IDSS DS(o ..
STP4NB80FP ,N-CHANNEL 800VSTP4NB80STP4NB80FP®N - CHANNEL 800V - 3Ω - 4A - TO-220/TO-220FPPowerMESH™ MOSFETTYPE V R IDSS DS(o ..
STP4NC50 ,N-CHANNEL 500VELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STP4NC50. ,N-CHANNEL 500VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP4NC50 STP4NC50FPV Drain-source Voltage (V = 0 ..
STP4NC60 ,NSTP4NC60 - STP4NC60FPSTB4NC60-12N-CHANNEL 600V - 1.8Ω - 4.2A TO-220/TO-220FP/I PAKPowerMesh™II MOSF ..
T0-220 , Fit Rate / Equivalent Device Hours
T0-220 , Fit Rate / Equivalent Device Hours
T0790 ,700 MHz to 2700 MHz Direct Quadrature ModulatorBlock Diagram 16BBQ-1BBQ+4 13LO+ RF+0°12590°LO- RF-8BBI+9BBI-Rev. 4555C–SIGE–11/03Pin Configuration ..
T0800-PJQ ,5-CHANNEL LASER DRIVER WITH RF OSCILLATOR AND 2 OUTPUTSFeatures• Current-controlled Output Current Source with 5 Input Channels 2 Selectable Outputs for ..
T0806 ,3-channel laser driver with RF oscillator and 2 outputsApplications DVD-ROM with CD-RW Capability (Combo Drives)and 2 Outputs Combo Drives with CD and D ..
T0806 ,3-channel laser driver with RF oscillator and 2 outputsFeatures Current-controlled Output Current Source, 3 Input Channels Two Selectable Outputs for Gr ..

STP4NB50-STP4NB50FP
N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFET
STP4NB50
STP4NB50FP
N - CHANNEL ENHANCEMENT MODE
PowerMESH MOSFET
PRELIMINARY DATA TYPICAL RDS(on) = 2.5 Ω 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED EXTREMELY HIGH dv/dt CAPABILITY
DESCRIPTION
Using the latest high voltage MESH
OVERLAY process, SGS-Thomson has
designed an advanced family of Power
MOSFETs with outstanding performance. The
new patent pending strip layout coupled with the
Company’s proprietary edge termination
structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching
characteristics.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
(•) Pulse width limited by safe operating area (1) ISD ≤ 4A, di/dt ≤ 200 A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
August 2001
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THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
STP4NB50/FP
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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
STP4NB50/FP
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Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 2: Unclamped Inductive Waveform
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
STP4NB50/FP
4/7
STP4NB50/FP
5/7

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