STP4NA90 ,N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORELECTRICAL CHARACTERISTICS (T case = 25 °C unless otherwise specified)
OFF
———-mmm
V(BR)DSS ..
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STP4NA90
N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
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N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
TYPE Voss Roswn) Io
STP4NA90 900 V < 4 Q 3.5 A
STP4NA90FI 900 V < 4 n 2.2 A
TYPICAL Ros(on) = 3.1 n
i 30V GATE TO SOURCE VOLTAGE RATING
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100°C
LOW INTRINSIC CAPAC ITANC ES
GATE CHARGE MINIMIZED
REDUCED THRESHOLD VOLTAGE SPREAD
APPLICATIONS
- HIGH CURRENT, HIGH SPEED SWITCHING
n SWITCH MODE POWER SUPPLIES (SMPS)
. DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
T0-22 0
ISOWATr220
INTERNAL SCHEMATIC DIAGRAM
SCOSI 4O
Symbol Parameter Value Unit
STP4NA90 STP4N90FI
Vos Drain-source Voltage (Vos = 0) 900 V
VDGR Drain- gate Voltage (Res = 20 kn) 900 V
Vas Gate-source Voltage k 30 V
io Drain Current (continuous) at Te = 25 ''C 3.5 2.2 A
lo Drain Current (continuous) at Te = 100 °C 2.2 1.4 A
IoM(o) Drain Current (pulsed) 14 14 A
Ptot Total Dissipation at Tc = 25 ''C 110 45 W
Derating Factor 0.88 0.36 W/°C
Vlso Insulation \Mthstand Voltage (DC) - 2000 V
Tstg Storage Temperature -65 to 150 oc
T) Max. Operating Junction Temperature 150 oc
(0) Pulse width limited by safe operating area
November 1996 IE
STP4NA901Fl
THER MAL DATA
TO-220 ISOWATT220
Rthrcase Thermal Resistance Junction-case Max 1.13 2.77 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
Rthc-sink Thermal Resistance Case-sink Typ 0.5 "ctw
T1 Maximum Lead Temperature For Soldering Purpose 300 °C
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
IAR Avalanche Current, Repetitive or Not-Repetitive 3.5 A
(pulse width limited by T; max, 5 < 1%)
EAS Single Pulse Avalanche Energy 65 mJ
(starting T, = 25 °C, lo= IAR, VDD= 50 V)
EAR Repetitive Avalanche Energy 2.5 mJ
(pulse width limited by Ti max, 6 < 1%)
IAR Avalanche Current, Repetitive or Not-Repetitive 2.2 A
(Te = 100 Y, pulse width limited by T; max, 5 < 1%)
ELECTRICAL CHARACTERISTICS (Tease = 25 °C unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source ID = 250 pA Vas = 0 900 V
Breakdown Voltage
loss Zero Gate Voltage Vos = Max Rating 25 “A
Drain Current (VGs = 0) Vos = Max Rating x 0.8 To: 100 °C 250 pA
less Gate-body Leakage Vas = , 30 V A 100 nA
Current (Vos = 0)
ON (*)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Vesan) Gate Threshold Voltage Vos = Vas ID = 250 WA 2.25 3 3.75 V
RDS(on) Static Drain-source On VGS = 10V lo = 2 A 3.1 4 Q
Resistance n
loam) On State Drain Current Vos > lqon) x Rasmumax 4 A
Vas = 10 V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
9150') Forward Vos > Iqon) x RDS(on)max ID = 2A 2.5 4.5 S
Transconductance
Ciss Input Capacitance Vos = 25 V f= 1 MHz I/tss = 0 1100 1450 pF
Cass Output Capacitance 110 145 pF
Crss Reverse Transfer 26 35 pF
Capacitance
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