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STP4N20STN/a350avaiN-CHANNEL 200V


STP4N20 ,N-CHANNEL 200VSTP4N20®N - CHANNEL 200V - 1.3 Ω - 4A TO-220POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTP4N20 200 ..
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T0-220 , Fit Rate / Equivalent Device Hours
T0-220 , Fit Rate / Equivalent Device Hours
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STP4N20
N-CHANNEL 200V
STP4N20
N - CHANNEL 200V - 1.3 Ω - 4A TO-220
POWER MOS TRANSISTOR TYPICAL RDS(on) = 1.3 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED LOW GATE CHARGE HIGH CURRENT CAPABILITY 150 o C OPERATING TEMPERATURE APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS DC-DC CONVERTERS & DC-AC INVERTERS TELECOMMUNICATION POWER SUPPLIES INDUSTRIAL MOTOR DRIVERS
February 1999
ABSOLUTE MAXIMUM RATINGS

(•) Pulse width limited by safe operating area
1/8
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Tcase = 25
o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
STP4N20

2/8
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area Thermal Impedance
STP4N20

3/8
Output Characteristics
Transconductance
Gate Charge vs Gate-source Voltage
Transfer Characteristics
Static Drain-source On Resistance
Capacitance Variations
STP4N20

4/8
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
STP4N20

5/8
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits For

Resistive Load
Fig. 2: Unclamped Inductive Waveform
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching

And Diode Recovery Times
STP4N20

6/8
ic,good price


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