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STP45NF06LSTN/a80avaiN-CHANNEL 60V 0.022OHM 38A TO-220 STRIPFET POWER MOSFET


STP45NF06L ,N-CHANNEL 60V 0.022OHM 38A TO-220 STRIPFET POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0)60 VDS GSV Drain-ga ..
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STP45NF06L
N-CHANNEL 60V
1/10September 2002
STP45NF06L
STB45NF06L

N-CHANNEL 60V- 0.022Ω -38A TO-220/ D2 PAK
STripFET™II POWER MOSFET
(1)ISD ≤38A, di/dt ≤300A/μs, VDD≤ V(BR)DSS,Tj≤ TJMAX. TYPICAL RDS(on)= 0.022Ω EXCEPTIONAL dv/dt CAPABILITY LOGIC LEVEL GATE DRIVE
DESCRIPTION

This Power Mosfetis the latest developmentof
STMicroelectronics unique “Single Feature
Size™” strip-based process. The resulting tran-
sistor shows extremely high packing density for
low on-resistance, rugged avalance characteris-
tics and less critical alignment steps thereforeare-
markable manufacturing reproducibility.
APPLICATIONS
HIGH-EFFICIENCY DC-DC CONVERTERS SOLENOID AND RELAY DRIVERS MOTOR CONTROL, AUDIO AMPLIFIERS DC-DC& DC-AC CONVERTERS
ABSOLUTE MAXIMUM RATINGS

(�) Pulse width limitedby safe operating area
STP45NF06L- STB45NF06L
2/10
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(TCASE=25°C UNLESS OTHERWISE SPECIFIED)
OFF (1)
DYNAMIC
3/10
STP45NF06L- STB45NF06L
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration=300μs, duty cycle1.5%. Pulse width limitedby safe operating area.
Thermal ImpedenceSafe Operating Area
STP45NF06L- STB45NF06L
4/10
Output Characteristics
Gate Chargevs Gate-source Voltage
Transconductance Static Drain-source On Resistance
Transfer Characteristics
5/10
STP45NF06L- STB45NF06L
Normalized Gate Threshold Voltagevs
Temperature
Source-drain Diode Forward Characteristics
Normalized On Resistancevs Temperature
STP45NF06L- STB45NF06L
6/10
Fig.5:
Test For Inductive
Fig.4:
Gate Charge test Circuit
Fig.3:
Switching
Resistive Load
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