STP45N65M5 ,N-channel 650 V, 0.067 Ohm, 35 A, MDmesh(TM) V Power MOSFET in TO-220 packageElectrical characteristics(T = 25 °C unless otherwise specified)CTable 5. On /off statesSymbol Para ..
STP45NE06L ,N-CHANNEL 60VSTP45NE06LSTP45NE06LFP®N - CHANNEL 60V - 0.022Ω - 45A - TO-220/TO-220FPSTripFET™ POWER MOSFETPRELI ..
STP45NF06 ,N-CHANNEL 60V 0.022 OHM 38A TO-220 STRIPFET POWER MOSFETSTP45NF06N-CHANNEL 60V - 0.022Ω - 38A TO-220STripFET™ POWER MOSFETPRELIMINARY DATATYPE V R IDSS DS( ..
STP45NF06.. ,N-CHANNEL 60V 0.022 OHM 38A TO-220 STRIPFET POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 60 VDS GSV Drain- ..
STP45NF06L ,N-CHANNEL 60V 0.022OHM 38A TO-220 STRIPFET POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0)60 VDS GSV Drain-ga ..
STP45NF3LL ,N-CHANNEL 30V 0.014 OHM 45A TO-220/TO-220FP/D2PAK STRIPFET II POWER MOSFET
T0-220 , Fit Rate / Equivalent Device Hours
T0-220 , Fit Rate / Equivalent Device Hours
T0790 ,700 MHz to 2700 MHz Direct Quadrature ModulatorBlock Diagram 16BBQ-1BBQ+4 13LO+ RF+0°12590°LO- RF-8BBI+9BBI-Rev. 4555C–SIGE–11/03Pin Configuration ..
T0800-PJQ ,5-CHANNEL LASER DRIVER WITH RF OSCILLATOR AND 2 OUTPUTSFeatures• Current-controlled Output Current Source with 5 Input Channels 2 Selectable Outputs for ..
T0806 ,3-channel laser driver with RF oscillator and 2 outputsApplications DVD-ROM with CD-RW Capability (Combo Drives)and 2 Outputs Combo Drives with CD and D ..
T0806 ,3-channel laser driver with RF oscillator and 2 outputsFeatures Current-controlled Output Current Source, 3 Input Channels Two Selectable Outputs for Gr ..
STP45N65M5
N-channel 650 V, 0.067 Ohm, 35 A, MDmesh(TM) V Power MOSFET in D2PAK package
March 2013 DocID022854 Rev 4 1/20
N-channel 650 V , 0.067 Ω typ., 35 A MDmesh™ V Power MOSFET
in D2 PAK, TO-220FP and TO-220 packages
Datasheet − production data
Features Worldwide best RDS(on) * area Higher VDSS rating and high dv/dt capability Excellent switching performance 100% avalanche tested
Applications Switching applications
DescriptionThese devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Table 1. Device summary
Contents STB45N65M5, STF45N65M5, STP45N65M52/20 DocID022854 Rev 4
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
DocID022854 Rev 4 3/20
STB45N65M5, STF45N65M5, STP45N65M5 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings Limited by maximum junction temperature. ISD ≤ 35 A, di/dt ≤ 400 A/µs, VDS(Peak) < V(BR)DSS, VDD = 400 V VDS ≤ 480 V
Table 3. Thermal data When mounted on 1 inch² FR-4, 2 Oz copper board.
Table 4. Avalanche characteristics
Electrical characteristics STB45N65M5, STF45N65M5, STP45N65M5
4/20 DocID022854 Rev 4
2 Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 5. On /off states
Table 6. Dynamic Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when
VDS increases from 0 to 80% VDSS Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss
when VDS increases from 0 to 80% VDSS
DocID022854 Rev 4 5/20
STB45N65M5, STF45N65M5, STP45N65M5 Electrical characteristics
Table 7. Switching times
Table 8. Source drain diode Pulse width limited by safe operating area. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
