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STP40NF12 |STP40NF12ST N/a20000avaiN-CHANNEL 120V


STP40NF12 ,N-CHANNEL 120VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0) 120 VDS GSV Drain- ..
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T0-220 , Fit Rate / Equivalent Device Hours
T0-220 , Fit Rate / Equivalent Device Hours
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STP40NF12
N-CHANNEL 120V
1/8October 2003
STP40NF12

N-CHANNEL 120V- 0.028Ω -40A TO-220
LOW GATE CHARGE STripFET™II POWER MOSFET
(1)ISD ≤40A, di/dt ≤600A/μs, VDD≤ V(BR)DSS,Tj≤ TJMAX.
(2) StartingTj= 25°C,ID= 40A, VDD =50V TYPICAL RDS(on)= 0.028Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION

This Power MOSFET series realized with STMicro-
electronics unique STripFET process has specifical- been designedto minimize input capacitance and
gate charge.Itis therefore suitable as primary
switchin advanced high-efficiency isolated DC-DC
convertersfor Telecom and Computer application.It also intended for any application with low gate
charge drive requirements.
APPLICATIONS
HIGH-EFFICIENCY DC-DC CONVERTERS UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS

(�) Pulse width limitedby safe operating area
STP40NF12
2/8
THERMAL DATA
ELECTRICAL CHARACTERISTICS
(TCASE=25°C UNLESS OTHERWISE SPECIFIED)
OFF (1)
DYNAMIC
3/8
STP40NF12
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration=300μs, duty cycle1.5%. Pulse width limitedby safe operating area.
Thermal ImpedanceSafe Operating Area
STP40NF12
4/8
Transconductance Static Drain-source On Resistance
Output Characteristics Transfer Characteristics
Gate Chargevs Gate-source Voltage
5/8
STP40NF12
Normalized Gate Threshold Voltagevs
Temperature
Source-drain Diode Forward Characteristics
Normalized On Resistancevs Temperature
Normalized Drain-Source Breakdownvs
Temperature
STP40NF12
6/8
Fig.5:
Test For Inductive
Fig.4:
Gate Charge test Circuit
Fig.3:
Switching
Resistive Load
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