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STB40NF10STN/a40avaiN-CHANNEL 100V
STP40NF10STMN/a40avaiN-CHANNEL 100V


STP40NF10 ,N-CHANNEL 100VSTP40NF10STB40NF10 - STB40NF10-12 2N-CHANNEL 100V - 0.024Ω - 50A TO-220/D PAK/I PAKLOW GATE CHARGE ..
STP40NF10L ,N-CHANNEL 100V 0.028 OHM 40A TO-220 LOW GATE CHARGE STRIPFET POWER MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STP40NF12 ,N-CHANNEL 120VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0) 120 VDS GSV Drain- ..
STP40NF20 ,N-channel 200VFeatures Type V R I PDSS DS(on) D W3STB40NF20 200V <0.045Ω 40A 160W1321STP40NF20 200V <0.04 ..
STP40NS15 ,N-CHANNEL 150V 0.042 OHM 40A TO-220 MESH OVERLAY MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 150 VDS GSV Drain ..
STP42N65M5 ,N-channel 650 V, 0.070 Ohm, 33 A MDmesh(TM) V Power MOSFET in TO-220Electrical characteristics(T = 25 °C unless otherwise specified)CTable 4. On /off statesSymbol Para ..
T0-220 , Fit Rate / Equivalent Device Hours
T0-220 , Fit Rate / Equivalent Device Hours
T0790 ,700 MHz to 2700 MHz Direct Quadrature ModulatorBlock Diagram 16BBQ-1BBQ+4 13LO+ RF+0°12590°LO- RF-8BBI+9BBI-Rev. 4555C–SIGE–11/03Pin Configuration ..
T0800-PJQ ,5-CHANNEL LASER DRIVER WITH RF OSCILLATOR AND 2 OUTPUTSFeatures• Current-controlled Output Current Source with 5 Input Channels 2 Selectable Outputs for ..
T0806 ,3-channel laser driver with RF oscillator and 2 outputsApplications DVD-ROM with CD-RW Capability (Combo Drives)and 2 Outputs Combo Drives with CD and D ..
T0806 ,3-channel laser driver with RF oscillator and 2 outputsFeatures Current-controlled Output Current Source, 3 Input Channels Two Selectable Outputs for Gr ..


STB40NF10-STP40NF10
N-CHANNEL 100V
1/11September 2002
STP40NF10
STB40NF10 - STB40NF10-1

N-CHANNEL 100V - 0.024Ω - 50A TO-220/D2 PAK/I2 PAK
LOW GATE CHARGE STripFET™ II POWER MOSFET
(1) ISD ≤40A, di/dt ≤600A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(2) Starting Tj = 25°C, ID = 40A, VDD = 50V TYPICAL RDS(on) = 0.024Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED
CHARACTERIZATION ADD SUFFIX “T4” FOR ORDERING IN TAPE &
REEL
DESCRIPTION

This Power MOSFET series realized with STMicro-
electronics unique STripFET process has specifical-
ly been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency isolated DC-DC
converters for Telecom and Computer application. It
is also intended for any application with low gate
charge drive requirements.
APPLICATIONS
HIGH-EFFICIENCY DC-DC CONVERTERS UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS

(�) Pulse width limited by safe operating area
(*) Limited by Package
STP40NF10 - STB40NF10 - STB40NF10-1
THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF (1)
DYNAMIC
3/11
STP40NF10 - STB40NF10 - STB40NF10-1
ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
Thermal Impedance Safe Operating Area
STP40NF10 - STB40NF10 - STB40NF10-1
Output Characteristics Transfer Characteristics
Gate Charge vs Gate-source Voltage
Static Drain-source On ResistanceTransconductance
5/11
STP40NF10 - STB40NF10 - STB40NF10-1
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
Normalized Drain-Source Breakdown vs
Temperature
STP40NF10 - STB40NF10 - STB40NF10-1
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For

Resistive Load
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