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Partno	Mfg	Dc	Qty	Available	Descript
STP40NE03L-20 \|STP40NE03L20	ST	N/a	90	avai	OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN

STP40NE03L-20 ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTP40NE03L-20N - CHANNEL ENHANCEMENT MODE" SINGLE FEATURE SIZE™ " POWER MOSFETTYPE V R IDSS DS(on) ..
STP40NF03L ,NSTP40NF03L®N - CHANNEL 30V - 0.020 Ω - 40A TO-220STripFET™ POWER MOSFETTYPE V R IDSS DS(on) DSTP ..
STP40NF03L. ,NSTP40NF03L®N - CHANNEL 30V - 0.020 Ω - 40A TO-220STripFET™ POWER MOSFETTYPE V R IDSS DS(on) DSTP ..
STP40NF10 ,N-CHANNEL 100VSTP40NF10STB40NF10 - STB40NF10-12 2N-CHANNEL 100V - 0.024Ω - 50A TO-220/D PAK/I PAKLOW GATE CHARGE ..
STP40NF10L ,N-CHANNEL 100V 0.028 OHM 40A TO-220 LOW GATE CHARGE STRIPFET POWER MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STP40NF12 ,N-CHANNEL 120VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0) 120 VDS GSV Drain- ..
T0-220 , Fit Rate / Equivalent Device Hours
T0-220 , Fit Rate / Equivalent Device Hours
T0790 ,700 MHz to 2700 MHz Direct Quadrature ModulatorBlock Diagram 16BBQ-1BBQ+4 13LO+ RF+0°12590°LO- RF-8BBI+9BBI-Rev. 4555C–SIGE–11/03Pin Configuration ..
T0800-PJQ ,5-CHANNEL LASER DRIVER WITH RF OSCILLATOR AND 2 OUTPUTSFeatures• Current-controlled Output Current Source with 5 Input Channels 2 Selectable Outputs for ..
T0806 ,3-channel laser driver with RF oscillator and 2 outputsApplications DVD-ROM with CD-RW Capability (Combo Drives)and 2 Outputs Combo Drives with CD and D ..
T0806 ,3-channel laser driver with RF oscillator and 2 outputsFeatures Current-controlled Output Current Source, 3 Input Channels Two Selectable Outputs for Gr ..

STP40NE03L-20
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
STP40NE03L-20
N - CHANNEL ENHANCEMENT MODE
" SINGLE FEATURE SIZE " POWER MOSFET TYPICAL RDS(on) = 0.014 Ω EXCEPTIONAL dv/dt CAPABILITY LOW GATE CHARGE A 100 oC APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power MOSFET is the latest development of
SGS-THOMSON unique "Single Feature Size"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS MOTOR CONTROL, AUDIO AMPLIFIERS DC-DC & DC-AC CONVERTERS IN HIGH
PERFORMANCE VRMs AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
October 1997
ABSOLUTE MAXIMUM RATINGS
(•) Pulse width limited by safe operating area (1) ISD ≤ 40 A, di/dt ≤ 300 A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/8
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
STP40NE03L-20
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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area Thermal Impedance
STP40NE03L-20
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Output Characteristics
Transconductance
Gate Charge vs Gate-source Voltage
Transfer Characteristics
Static Drain-source On Resistance
Capacitance Variations
STP40NE03L-20
4/8
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
STP40NE03L-20
5/8
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 2: Unclamped Inductive Waveform
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
STP40NE03L-20
6/8

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