STP3NC70Z ,N-CHANNEL 700V 4.1 OHM 2.5A TO-220/TO-220FP ZENER-PROTECTED POWERMESH III MOSFETELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ONSymbol Parameter Test Conditions Min. Typ. Max. U ..
STP3NC90Z ,N-CHANNEL 900V 3.2 OHM 3.5A TO-220/TO-220FP/I2PAK ZENER-PROTECTED POWERMESH III MOSFET
STP3NK100Z , N-channel 1000V - 5.4Ω - 2.5A - TO-220 - TO-220FP - DPAK Zener-protected SuperMESH™ Power MOSFET
STP3NK80Z ,N-CHANNEL 800VSTP3NK80Z - STF3NK80ZSTD3NK80Z - STD3NK80Z-1N-CHANNEL 800V - 3.8Ω - 2.5A TO-220/FP/DPAK/IPAKZener-P ..
STP3NK90Z ,N-CHANNEL 900V 4.1 OHM 3A TO-220/TO-220FP/DPAK/IPAK ZENER-PROTECTED SUPERMESH POWER MOSFETFEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically bee ..
STP3NK90ZFP ,N-CHANNEL 900V 4.1 OHM 3A TO-220/TO-220FP/DPAK/IPAK ZENER-PROTECTED SUPERMESH POWER MOSFETAPPLICATIONS
STP3NC70Z
N-CHANNEL 700V 4.1 OHM 2.5A TO-220/TO-220FP ZENER-PROTECTED POWERMESH III MOSFET
1/10June 2001
STP3NC70Z
STP3NC70ZFPN-CHANNEL 700V - 4.1Ω - 2.5A TO-220/TO-220FP
Zener-Protected PowerMESH™III MOSFET
(1) ISD ≤2.5A, di/dt ≤100A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX TYPICAL RDS(on) = 4.1Ω EXTREMELY HIGH dv/dt AND CAPABILITY
GATE TO - SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW GATE INPUT RESISTANCE GATE CHARGE MINIMIZED
DESCRIPTIONThe third generation of MESH OVERLAY™ Power
MOSFETs for very high voltage exhibits unsur-
passed on-resistance per unit area while integrat-
ing back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capa-
bility with higher ruggedness performance as re-
quested by a large variety of single-switch
applications.
APPLICATIONS SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION WELDING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS(•)Pulse width limited by safe operating area
STP3NC70Z/STP3NC70ZFP
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF (1)
DYNAMIC
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STP3NC70Z/STP3NC70ZFP
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
GATE-SOURCE ZENER DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area. ΔVBV = αT (25°-T) BVGSO(25°)
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally
be applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient
and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid
the usage of external components.
STP3NC70Z/STP3NC70ZFP
Safe Operating Area for TO-220FP
Safe Operating Area for TO-220
Transfer CharacteristicsOutput Characteristics
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STP3NC70Z/STP3NC70ZFP
Gate Charge vs Gate-source Voltage
Transconductance
STP3NC70Z/STP3NC70ZFP
Source-drain Diode Forward Characteristics
