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STP3NB80 |STP3NB80ST N/a50avaiN-CHANNEL 800V
STP3NB80FPSTN/a100avaiN-CHANNEL 800V


STP3NB80FP ,N-CHANNEL 800VSTP3NB80STP3NB80FP® N - CHANNEL 800V - 4.6Ω - 2.6A - TO-220/TO-220FPPowerMESH™ MOSFETTYPE V R IDS ..
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STP3NB90FP ,NSTP3NB90STP3NB90FPN-CHANNEL 900V - 4 Ω - 3.5 A TO-220/TO-220FPPowerMesh™ MOSFETTYPE V R I PwDSS DS( ..
STP3NC60FP ,N-CHANNEL 600V 3.3 OHM 3A TO-220/TO-220FP POWER MESH II MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STP3NC70Z ,N-CHANNEL 700V 4.1 OHM 2.5A TO-220/TO-220FP ZENER-PROTECTED POWERMESH III MOSFETELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ONSymbol Parameter Test Conditions Min. Typ. Max. U ..
STP3NC90Z ,N-CHANNEL 900V 3.2 OHM 3.5A TO-220/TO-220FP/I2PAK ZENER-PROTECTED POWERMESH III MOSFET
T0-220 , Fit Rate / Equivalent Device Hours
T0-220 , Fit Rate / Equivalent Device Hours
T0790 ,700 MHz to 2700 MHz Direct Quadrature ModulatorBlock Diagram 16BBQ-1BBQ+4 13LO+ RF+0°12590°LO- RF-8BBI+9BBI-Rev. 4555C–SIGE–11/03Pin Configuration ..
T0800-PJQ ,5-CHANNEL LASER DRIVER WITH RF OSCILLATOR AND 2 OUTPUTSFeatures• Current-controlled Output Current Source with 5 Input Channels 2 Selectable Outputs for ..
T0806 ,3-channel laser driver with RF oscillator and 2 outputsApplications DVD-ROM with CD-RW Capability (Combo Drives)and 2 Outputs Combo Drives with CD and D ..
T0806 ,3-channel laser driver with RF oscillator and 2 outputsFeatures Current-controlled Output Current Source, 3 Input Channels Two Selectable Outputs for Gr ..


STP3NB80 -STP3NB80FP
N-CHANNEL 800V
STP3NB80
STP3NB80FP

N - CHANNEL 800V - 4.6Ω - 2.6A - TO-220/TO-220FP
PowerMESH MOSFET TYPICAL RDS(on) = 4.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
DESCRIPTION

Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING UNINTERRUPTIBLE POWER SUPPLY(UPS) DC-DC & DC-AC CONVERTERS FOR
TELECOM, INDUSTRIAL AND CONSUMER
ENVIRONMENT
January 1999
ABSOLUTE MAXIMUM RATINGS

(•) Pulse width limited by safe operating area (1) ISD ≤ 2.6 A, di/dt ≤ 200 A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMA
(••) Limited only by maximum temperature allowed
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THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Tcase = 25
o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
STP3NB80/FP

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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area for TO-220 Safe Operating Area for TO-220FP
STP3NB80/FP

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Thermal Impedance for TO-220
Output Characteristics
Transconductance
Thermal Impedance forTO-220FP
Transfer Characteristics
Static Drain-source On Resistance
STP3NB80/FP

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Gate Charge vs Gate-source Voltage
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Capacitance Variations
Normalized On Resistance vs Temperature
STP3NB80/FP

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Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits For

Resistive Load
Fig. 2: Unclamped Inductive Waveform
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching

And Diode Recovery Times
STP3NB80/FP

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