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Partno	Mfg	Dc	Qty	Available	Descript
STP3NB60	STM	N/a	25	avai	N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFET
STP3NB60FP	ST	N/a	413	avai	N

STP3NB60FP ,NSTP3NB60STP3NB60FPN - CHANNEL ENHANCEMENT MODEPowerMESH™ MOSFETTYPE V R IDSS DS(on) DSTP3NB60 600 ..
STP3NB80 ,N-CHANNEL 800VSTP3NB80STP3NB80FP® N - CHANNEL 800V - 4.6Ω - 2.6A - TO-220/TO-220FPPowerMESH™ MOSFETTYPE V R IDS ..
STP3NB80FP ,N-CHANNEL 800VSTP3NB80STP3NB80FP® N - CHANNEL 800V - 4.6Ω - 2.6A - TO-220/TO-220FPPowerMESH™ MOSFETTYPE V R IDS ..
STP3NB90 ,NABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP3NB90 STP3NB90FPV Drain-source Voltage (V =0) ..
STP3NB90FP ,NSTP3NB90STP3NB90FPN-CHANNEL 900V - 4 Ω - 3.5 A TO-220/TO-220FPPowerMesh™ MOSFETTYPE V R I PwDSS DS( ..
STP3NC60FP ,N-CHANNEL 600V 3.3 OHM 3A TO-220/TO-220FP POWER MESH II MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
T0-220 , Fit Rate / Equivalent Device Hours
T0-220 , Fit Rate / Equivalent Device Hours
T0790 ,700 MHz to 2700 MHz Direct Quadrature ModulatorBlock Diagram 16BBQ-1BBQ+4 13LO+ RF+0°12590°LO- RF-8BBI+9BBI-Rev. 4555C–SIGE–11/03Pin Configuration ..
T0800-PJQ ,5-CHANNEL LASER DRIVER WITH RF OSCILLATOR AND 2 OUTPUTSFeatures• Current-controlled Output Current Source with 5 Input Channels 2 Selectable Outputs for ..
T0806 ,3-channel laser driver with RF oscillator and 2 outputsApplications DVD-ROM with CD-RW Capability (Combo Drives)and 2 Outputs Combo Drives with CD and D ..
T0806 ,3-channel laser driver with RF oscillator and 2 outputsFeatures Current-controlled Output Current Source, 3 Input Channels Two Selectable Outputs for Gr ..

STP3NB60-STP3NB60FP
N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFET
STP3NB60
STP3NB60FP
N - CHANNEL ENHANCEMENT MODE
PowerMESH MOSFET TYPICAL RDS(on) = 3.3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, SGS-Thomson has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
March 1998
ABSOLUTE MAXIMUM RATINGS
1/9
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
STP3NB60/FP
2/9
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area for TO-220 Safe Operating Area for TO-220FP
STP3NB60/FP
3/9
Thermal Impedance for TO-220
Output Characteristics
Transconductance
Thermal Impedance forTO-220FP
Transfer Characteristics
Static Drain-source On Resistance
STP3NB60/FP
4/9
Gate Charge vs Gate-source Voltage
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Capacitance Variations
Normalized On Resistance vs Temperature
STP3NB60/FP
5/9
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 2: Unclamped Inductive Waveform
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
STP3NB60/FP
6/9

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