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STP3NB100STN/a1100avaiN-CHANNEL 1000V


STP3NB100 ,N-CHANNEL 1000VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP3NB100 STP3NB100FPV Drain-source Voltage (V = ..
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STP3NB100
N-CHANNEL 1000V
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PRELIMINARY DATA

August 2001
STP3NB100
STP3NB100FP

N-CHANNEL 1000V - 5.3Ω - 3A TO-220/TO-220FP
PowerMesh™ MOSFET TYPICAL RDS(on) = 5.3Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
DESCRIPTION

Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprieraty edge termi-
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING
EQUIPMENT
ABSOLUTE MAXIMUM RATINGS

(•)Pulse width limited by safe operating area
(1)ISD ≤3A, di/dt ≤200A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*)Limited only by maximum temperature allowed
STP3NB100/FP
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF (1)
DYNAMIC
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STP3NB100/FP
ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
STP3NB100/FP
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For

Resistive Load
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STP3NB100/FP
STP3NB100/FP
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