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STP30NS15LFP
N-CHANNEL 150V
1/9July 2003
STP30NS15LFPN-CHANNEL 150V - 0.085 Ω - 10A TO-220FP
MESH OVERLAY™ POWER MOSFET TYPICAL RDS(on) = 0.085Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED
DESCRIPTIONUsing the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an advanced
family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprietary edge termination
structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteristics.
APPLICATIONS SWITCHING “S” CAPACITOR
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area. (1) Starting Tj = 25 oC, ID = 15A, VDD= 75V
(2) ISD ≤35A, di/dt ≤300A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
INTERNAL SCHEMATIC DIAGRAM
STP30NS15LFP
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)OFF
ON (1)
DYNAMIC
3/9
STP30NS15LFPSWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ELECTRICAL CHARACTERISTICS (continued)
STP30NS15LFP
5/9
STP30NS15LFPNormalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature .
STP30NS15LFP
Fig. 2: Gate Charge test Circuit
Fig. 1: Switching Times Test Circuits For Resistive Load
