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STB30NF10STN/a4800avaiN-CHANNEL 100V 0.038 OHM 35A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STRIPFET POWER II MOSFET
STP30NF10STN/a15000avaiN-CHANNEL 100V 0.038 OHM 35A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STRIPFET POWER II MOSFET
STP30NF10FPSTN/a30avaiN-CHANNEL 100V 0.038 OHM 35A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STRIPFET POWER II MOSFET


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STB30NF10-STP30NF10-STP30NF10FP
N-CHANNEL 100V 0.038 OHM 35A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STRIPFET POWER II MOSFET
1/11May 2002
STB30NF10
STP30NF10 STP30NF10FP

N-CHANNEL 100V - 0.038 Ω - 35A TO-220/TO-220FP/D2 PAK
LOW GATE CHARGE STripFET™ II POWER MOSFET TYPICAL RDS(on) = 0.038 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED
CHARACTERIZATION SURFACE-MOUNTING D2PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
DESCRIPTION

This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
HIGH-EFFICIENCY DC-DC CONVERTERS UPS AND MOTOR CONTROL
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS

(•) Pulse width limited by safe operating area. (1) ISD ≤30A, di/dt ≤400A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(2) Starting Tj = 25 oC, ID = 15A, VDD= 30V
STB30NF10 STP30NF10 STP30NF10FP
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)

OFF
ON (*)
DYNAMIC
3/11
STB30NF10 STP30NF10 STP30NF10FP

SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ELECTRICAL CHARACTERISTICS (continued)
STB30NF10 STP30NF10 STP30NF10FP
5/11
STB30NF10 STP30NF10 STP30NF10FP

Gate Charge vs Gate-source Voltage Capacitance Variations
STB30NF10 STP30NF10 STP30NF10FP
Fig. 1: Unclamped Inductive Load Test CircuitFig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive

Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching

And Diode Recovery Times
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