STP24NF10 ,N-CHANNEL 100VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 100 VDS GSV Drain ..
STP24NM65N , N-channel 650 V - 0.16 Ω - 19 A - TO-220 - TO-220FP - D2PAK I2PAK - TO-247 second generation MDmesh™ Power MOSFET
STP25NM50N ,N-CHANNEL 550V @ TjMAXAbsolute Maximum ratingsSymbol Parameter Value UnitTO-220/D²PAK/I ² PAK/TO-220FPTO-247VGate- source ..
STP25NM60N ,N-CHANNEL 650 @Tjmax-0.140&-20A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFETAbsolute Maximum ratings Symbol Parameter Value UnitTO-220/I²PAKTO-220FPTO-247/D²PAKV Gate- source ..
STP25NM60ND ,N-channel 600 V, 0.13 Ohm typ., 21 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-220 packageapplications' DescriptionThese FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode a ..
STP26NM60N ,N-channel 600 V, 0.135 Ohm typ., 20 A MDmesh(TM) II Power MOSFET in TO-220 packageElectrical characteristics(T = 25 °C unless otherwise specified)CASETable 5. On/off statesSymbol Pa ..
SZ45B3 , SURFACE MOUNT SILICON ZENER DIODES
SZ45B4 , SURFACE MOUNT SILICON ZENER DIODES
SZ45B5 , SURFACE MOUNT SILICON ZENER DIODES
SZ45B6 , SURFACE MOUNT SILICON ZENER DIODES
SZ45B7 , SURFACE MOUNT SILICON ZENER DIODES
SZ45B8 , SURFACE MOUNT SILICON ZENER DIODES
STP24NF10
N-CHANNEL 100V
1/10April 2002
STP24NF10
STB24NF10N-CHANNEL 100V - 0.055Ω - 26A TO-220 / D2 PAK
LOW GATE CHARGE STripFET™ II POWER MOSFET
(1) ISD ≤24A, di/dt ≤300A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(2) Starting Tj = 25°C, ID = 12A, VDD = 30V TYPICAL RDS(on) = 0.055Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTIONThis Power Mosfet series realized with STMicro-
electronics unique STripFET process has specifical-
ly been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency isolated DC-DC
converters for Telecom and Computer application. It
is also intended for any application with low gate
charge drive requirements.
APPLICATIONS HIGH-EFFICIENCY DC-DC CONVERTERS UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS(�) Pulse width limited by safe operating area
STP24NF10 - STB24NF10
THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF (1)
DYNAMIC
3/10
STP24NF10 - STB24NF10
Safe Operating Area
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
Thermal Impedence
STP24NF10 - STB24NF10
Gate Charge vs Gate-source Voltage Capacitance Variations
Transconductance Static Drain-source On Resistance
Output Characteristics Transfer Characteristics
5/10
STP24NF10 - STB24NF10
Normalized On Resistance vs TemperatureNormalized Gate Thereshold Voltage vs Temp.
Source-drain Diode Forward Characteristics
STP24NF10 - STB24NF10
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For Resistive Load
