STP23NM60ND ,N-channel 600 V, 0.150 Ohm, 19.5 A, FDmesh II Power MOSFET (with fast diode) TO-220Electrical characteristics(T = 25 °C unless otherwise specified)CASE Table 4. On/off statesSymbol ..
STP24NF10 ,N-CHANNEL 100VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 100 VDS GSV Drain ..
STP24NM65N , N-channel 650 V - 0.16 Ω - 19 A - TO-220 - TO-220FP - D2PAK I2PAK - TO-247 second generation MDmesh™ Power MOSFET
STP25NM50N ,N-CHANNEL 550V @ TjMAXAbsolute Maximum ratingsSymbol Parameter Value UnitTO-220/D²PAK/I ² PAK/TO-220FPTO-247VGate- source ..
STP25NM60N ,N-CHANNEL 650 @Tjmax-0.140&-20A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFETAbsolute Maximum ratings Symbol Parameter Value UnitTO-220/I²PAKTO-220FPTO-247/D²PAKV Gate- source ..
STP25NM60ND ,N-channel 600 V, 0.13 Ohm typ., 21 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-220 packageapplications' DescriptionThese FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode a ..
SZ459B , SURFACE MOUNT SILICON ZENER DIODES
SZ45B0 , SURFACE MOUNT SILICON ZENER DIODES
SZ45B1 , SURFACE MOUNT SILICON ZENER DIODES
SZ45B2 , SURFACE MOUNT SILICON ZENER DIODES
SZ45B3 , SURFACE MOUNT SILICON ZENER DIODES
SZ45B4 , SURFACE MOUNT SILICON ZENER DIODES
STP23NM60ND
N-channel 600 V, 0.150 Ohm, 19.5 A, FDmesh(TM) II Power MOSFET (with fast diode) D2PAK
December 2012 Doc ID 14367 Rev 4 1/22
STB23NM60ND, STF23NM60ND,
STP23NM60ND, STW23NM60NDN-channel 600 V , 0.150 Ω typ., 19.5 A, FDmesh™ II Power MOSFET
(with fast diode) in D²P AK, TO-220FP , TO-220 and TO-247 packages
Datasheet — production data
Features The worldwide best RDS(on) * area amongst the
fast recovery diode devices 100% avalanche tested Low input capacitance and gate charge Low gate input resistance High dv/dt and avalanche capabilities
Applications Switching applications
DescriptionThese FDmesh™ II Power MOSFETs with
intrinsic fast-recovery body diode are produced
using the second generation of MDmesh™
technology. Utilizing a new strip-layout vertical
structure, these revolutionary devices feature
extremely low on-resistance and superior
switching performance. They are ideal for bridge
topologies and ZVS phase-shift converters.
Table 1. Device summary
Contents STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND2/22 Doc ID 14367 Rev 4
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND Electrical ratings
Doc ID 14367 Rev 4 3/22
1 Electrical ratings
Table 2. Absolute maximum ratings Limited by maximum junction temperature Pulse width limited by safe operating area ISD ≤ 19.5 A, di/dt ≤ 600 A/µs, VDD =80% V(BR)DSS, VDS(peak) < V(BR)DSS
Table 3. Thermal data When mounted on 1 inch² FR-4, 2 Oz copper board.
Electrical characteristics STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND
4/22 Doc ID 14367 Rev 4
2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4. On/off states Characteristic value at turn off on inductive load
Table 5. Dynamic Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
STB23NM60ND, STF23NM60ND, STP23NM60ND, STW23NM60ND Electrical characteristics
Doc ID 14367 Rev 4 5/22
Table 6. Switching times
Table 7. Source drain diode Pulse width limited by safe operating area Pulsed: pulse duration = 300µs, duty cycle 1.5%
