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STF22NM60N |STF22NM60NST N/a4000avaiN-channel 600 V, 0.2 Ohm, 16 A MDmesh(TM) II Power MOSFET in TO-220FP
STP22NM60NST N/a1500avaiN-channel 600 V, 0.2 Ohm, 16 A MDmesh(TM) II Power MOSFET in TO-220


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STF22NM60N -STP22NM60N
N-channel 600 V, 0.2 Ohm, 16 A MDmesh(TM) II Power MOSFET in D2PAK

January 2011 Doc ID 15853 Rev 4 1/23
STB22NM60N, STF22NM60N, STI22NM60N
STP22NM60N, STW22NM60N

N-channel 600 V , 0.2 Ω , 16 A MDmesh™ II Power MOSFET
in D2P AK, TO-220FP, I2P AK, TO-220 and TO-247
Features
100% avalanche tested Low input capacitance and gate charge Low gate input resistance
Application

Switching applications
Description

These devices are made using the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
Figure 1. Internal schematic diagram


Table 1. Device summary

Contents STB/F/I/P/W22NM60N

2/23 Doc ID 15853 Rev 4
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
STB/F/I/P/W22NM60N Electrical ratings
Doc ID 15853 Rev 4 3/23

1 Electrical ratings




Table 2. Absolute maximum ratings
Limited only by maximum temperature allowed Pulse width limited by safe operating area ISD ≤ 16 A, di/dt ≤ 400 A/µs, VDSpeak ≤ V(BR)DSS, VDD = 80% V(BR)DSS
Table 3. Thermal data
When mounted on 1inch² FR-4 board, 2 oz Cu
Table 4. Thermal data

Electrical characteristics STB/F/I/P/W22NM60N

4/23 Doc ID 15853 Rev 4
2 Electrical characteristics

(Tcase = 25 °C unless otherwise specified)
Table 5. On /off states
Table 6. Dynamic
Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDS.
STB/F/I/P/W22NM60N Electrical characteristics
Doc ID 15853 Rev 4 5/23

Table 7. Switching times
Table 8. Source drain diode
Pulse width limited by safe operating area Pulsed: pulse duration = 300 µs, duty cycle 1.5%
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