STP22NM50 ,N-CHANNEL 500 VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP(B)22NM50(-1) STP22NM50FPV Drain-source Volta ..
STP22NM60N ,N-channel 600 V, 0.2 Ohm, 16 A MDmesh(TM) II Power MOSFET in TO-220Absolute maximum ratingsValueSymbol Parameter UnitD²PAK TO-220TO-220FPI²PAK TO-247V Gate- source vo ..
STP22NS25Z ,N-CHANNEL 250V 0.13 OHM 22A TO-220 / D2PAK ZENER-PROTECTED MESH OVERLAY MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)250 VDS GSV Drain- ..
STP23NM60N , N-channel 600 V - 0.150 Ω - 19 A - D2PAK - I2PAK - TO-220/FP TO-247, second generation MDmesh™ Power MOSFET
STP23NM60ND ,N-channel 600 V, 0.150 Ohm, 19.5 A, FDmesh II Power MOSFET (with fast diode) TO-220Electrical characteristics(T = 25 °C unless otherwise specified)CASE Table 4. On/off statesSymbol ..
STP24NF10 ,N-CHANNEL 100VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 100 VDS GSV Drain ..
SZ456C , SURFACE MOUNT SILICON ZENER DIODES
SZ456I , SURFACE MOUNT SILICON ZENER DIODES
SZ4575 , SURFACE MOUNT SILICON ZENER DIODES
SZ457F , SURFACE MOUNT SILICON ZENER DIODES
SZ4582 , SURFACE MOUNT SILICON ZENER DIODES
SZ458C , SURFACE MOUNT SILICON ZENER DIODES
STP22NM50
N-CHANNEL 500 V
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ADVANCED DATAJanuary 2003
STP22NM50- STP22NM50FP
STB22NM50- STB22NM50-1N-CHANNEL 500V- 0.16Ω- 20A TO-220/FP/D2 PAK/I2 PAK
MDmesh™Power MOSFET TYPICAL RDS(on)= 0.16Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE
DESCRIPTIONThe MDmesh™isa new revolutionary MOSFET tech-
nology that associates the Multiple Drain process with
the Company’s PowerMESH™ horizontal layout. The
resulting product has an outstanding low on-resis-
tance, impressively high dv/dt and excellent avalanche
characteristics. The adoptionof the Company’s propri-
etary strip technique yields overall dynamic perfor-
mance thatis significantly better than thatof similar
competition’s products.
APPLICATIONSThe MDmesh™ familyis very suitable for increasing
power densityof high voltage converters allowing sys-
tem miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS(•)Pulse width limitedby safe operating area
(1)ISD ≤20A, di/dt ≤400A/μs, VDD≤ V(BR)DSS,Tj≤ TJMAX.
(*)Limited onlyby maximum temperature allowed
STP22NM50/ STP22NM50FP/ STB22NM50/ STB22NM50-12/10
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE=25°C UNLESS OTHERWISE SPECIFIED)
OFF (1)
DYNAMIC Pulsed: Pulse duration=300μs, duty cycle1.5%. Cosseq.is definedasa constant equivalent capacitance givingthe same charging timeas Coss when VDS increases from0to 80%
VDSS.
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STP22NM50/ STP22NM50FP/ STB22NM50/ STB22NM50-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration=300μs, duty cycle1.5%. Pulse width limitedby safe operating area.
STP22NM50/ STP22NM50FP/ STB22NM50/ STB22NM50-14/10
Fig.5: Test For Inductive
Fig.4: Gate Charge test Circuit
Fig.3: Switching
Resistive Load
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STP22NM50/ STP22NM50FP/ STB22NM50/ STB22NM50-1
STP22NM50/ STP22NM50FP/ STB22NM50/ STB22NM50-16/10
