STP22NE03L ,N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFETSTP22NE03LN - CHANNEL ENHANCEMENT MODE" SINGLE FEATURE SIZE™ " POWER MOSFETTYPE V R IDSS DS(on) DST ..
STP22NE10L ,NSTP22NE10L®N - CHANNEL 100V - 0.07 Ω - 22A TO-220STripFET™ POWER MOSFETTYPE V R IDSS DS(on) DSTP ..
STP22NF03L ,N-CHANNEL 30V 0.038 OHM 22A TO-220 STRIPFET POWER MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STP22NM50 ,N-CHANNEL 500 VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP(B)22NM50(-1) STP22NM50FPV Drain-source Volta ..
STP22NM60N ,N-channel 600 V, 0.2 Ohm, 16 A MDmesh(TM) II Power MOSFET in TO-220Absolute maximum ratingsValueSymbol Parameter UnitD²PAK TO-220TO-220FPI²PAK TO-247V Gate- source vo ..
STP22NS25Z ,N-CHANNEL 250V 0.13 OHM 22A TO-220 / D2PAK ZENER-PROTECTED MESH OVERLAY MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)250 VDS GSV Drain- ..
SZ455B , SURFACE MOUNT SILICON ZENER DIODES
SZ455G , SURFACE MOUNT SILICON ZENER DIODES
SZ4562 , SURFACE MOUNT SILICON ZENER DIODES
SZ4568 , SURFACE MOUNT SILICON ZENER DIODES
SZ456C , SURFACE MOUNT SILICON ZENER DIODES
SZ456I , SURFACE MOUNT SILICON ZENER DIODES
STP22NE03L
N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
STP22NE03LN - CHANNEL ENHANCEMENT MODE
" SINGLE FEATURE SIZE " POWER MOSFET TYPICAL RDS(on) = 0.034 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION This Power Mosfet is the latest development of
SGS-THOMSON unique "Single Feature Size"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalance characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS MOTOR CONTROL, AUDIO AMPLIFIERS DC-DC & DC-AC CONVERTERS AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc. )
January 1998
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area (1) ISD ≤22 A, di/dt ≤ 300 A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/5
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
STP22NE03L2/5
ELECTRICAL CHARACTERISTICS (continued)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
STP22NE03L3/5
STP22NE03L4/5
. However, SGS-THOMSON Microelectronics assumes no responsability for the
or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
. . .
STP22NE03L5/5
:
www.ic-phoenix.com
.
