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STW21NM60NDSTN/a32avaiN-channel 600 V, 0.17 Ohm typ., 17 A, FDmesh(TM) II Power MOSFET (whit fast diode) in TO-247 package
STB21NM60NDSTN/a1000avaiN-channel 600 V, 0.17 Ohm typ., 17 A, FDmesh(TM) II Power MOSFET (whit fast diode) in D2PAK package
STF21NM60NDSTN/a15avaiN-channel 600 V, 0.17 Ohm typ., 17 A, FDmesh(TM) II Power MOSFET (whit fast diode) in TO-220FP package
STP21NM60NDSTN/a146avaiN-channel 600 V, 0.17 Ohm typ., 17 A, FDmesh(TM) II Power MOSFET (whit fast diode) in TO-220 package


STB21NM60ND ,N-channel 600 V, 0.17 Ohm typ., 17 A, FDmesh(TM) II Power MOSFET (whit fast diode) in D2PAK packageFeaturesTAB V RDSS @ DS(on) Order codes IDT max max3J31 21STB21NM60ND 650 V 0.22 Ω 17 A2D P ..
STB22NS25Z ,N-CHANNEL 250V 0.13 OHM 22A TO-220 / D2PAK ZENER-PROTECTED MESH OVERLAY MOSFETELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ONSymbol Parameter Test Conditions Min. Typ. Max. U ..
STB22NS25ZT4 ,N-CHANNEL 250V 0.13 OHM 22A TO-220 / D2PAK ZENER-PROTECTED MESH OVERLAY MOSFETELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ONSymbol Parameter Test Conditions Min. Typ. Max. U ..
STB230NH03L , N-channel 30V - 80A - D2PAK STripFET™ Power MOSFET
STB25NM50N ,N-CHANNEL 550V @ TjMAXAbsolute Maximum ratingsSymbol Parameter Value UnitTO-220/D²PAK/I ² PAK/TO-220FPTO-247VGate- source ..
STB25NM50N-1 ,N-CHANNEL 550V @ TjMAXFeatures Figure 1: PackageTYPE V (@Tj ) I RDSS MAX D DS(on)STB25NM50N-1 550V 21.5 A 0.150 ΩSTF25NM5 ..
STV0299B ,QPSK/BPSK LINK ICSTV0299BQPSK/BPSK LINK IC

STB21NM60ND-STF21NM60ND-STP21NM60ND-STW21NM60ND
N-channel 600 V, 0.17 Ohm typ., 17 A, FDmesh(TM) II Power MOSFET (whit fast diode) in D2PAK package
March 2013 DocID13781 Rev 5 1/21
STB21NM60ND, STF21NM60ND,
STP21NM60ND, STW21NM60ND

N-channel 600 V, 0.17 Ω typ., 17 A FDmesh™ II Power MOSFET
in D²PAK, TO-220FP, TO-220 and TO-247 packages
Datasheet - production data
Features
Intrinsic fast-recovery body diode Worldwide best RDS(on)*area amongst the fast
recovery diode devices 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Extremely high dv/dt and avalanche
capabilities
Applications
Switching applications
Description

These FDmesh™ II Power MOSFETs with
intrinsic fast-recovery body diode are produced
using the second generation of MDmesh™
technology. Utilizing a new strip-layout vertical
structure, these revolutionary devices feature
extremely low on-resistance and superior
switching performance. They are ideal for bridge
topologies and ZVS phase-shift converters.

Table 1. Device summary
Contents STB21NM60ND, STF21NM60ND, STP21NM60ND, STW21NM60ND
2/21 DocID13781 Rev 5
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
DocID13781 Rev 5 3/21
STB21NM60ND, STF21NM60ND, STP21NM60ND, STW21NM60ND Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Limited by maximum junction temperature. Pulse width limited by safe operating area. ISD ≤ 17 A, di/dt ≤ 600 A/μs, VDD = 80% V(BR)DSS; VDS(peak) ≤ V(BR)DSS
Table 3. Thermal data
Table 4. Avalanche characteristics
Electrical characteristics STB21NM60ND, STF21NM60ND, STP21NM60ND, STW21NM60ND
4/21 DocID13781 Rev 5
2 Electrical characteristics

(TCASE=25°C unless otherwise specified)
Table 5. On/off states
Characteristic value at turn off on inductive load
Table 6. Dynamic
Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
DocID13781 Rev 5 5/21
STB21NM60ND, STF21NM60ND, STP21NM60ND, STW21NM60ND Electrical characteristics
Table 7. Source drain diode
Pulse width limited by safe operating area Pulsed: Pulse duration = 300 μs, duty cycle 1.5%.
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