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STP20NE10STN/a21avaiN


STP20NE10 ,NABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0) 100 VDS GSV 100 VD ..
STP20NF06 ,N-CHANNEL 60VFeatures Figure 1:PackageTYPE V R IDSS DS(on) DSTP20NF06 60 V < 0.07 Ω 20 ASTF20NF06 60 V < 0.07 Ω ..
STP20NF06L ,N-CHANNEL 60VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitSTP20NF06L STF20NF06LV Drain-source Voltage (V = ..
STP20NF20 ,N-channel 200VAbsolute maximum ratingsValueSymbol Parameter UnitTO-220, DPAK TO-220FPV Drain-source voltage (V = ..
STP20NK50Z ,N-CHANNEL 500VAPPLICATIONS

STP20NE10
N
STP20NE10- CHANNEL 100V- 0.07Ω- 20A- TO-220
STripFET MOSFET TYPICAL RDS(on)= 0.07Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION

This Power MOSFETis the latest developmentof
SGS-THOMSON unique ”Single Feature Size”
strip-based process.The resulting transistor
shows extremely high packing densityfor low on-
resistance, rugged avalanche characteristics and
less critical alignment steps thereforea remark-
able manufacturingreproducibility.
APPLICATIONS
SOLENOID AND RELAY DRIVERS MOTOR CONTROL, AUDIO AMPLIFIERS DC-DC CONVERTERS AUTOMOTIVE ENVIRONMENT
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit

VDS Drain-source Voltage (VGS =0) 100 V
VDGR Drain- gate Voltage (RGS =20 kΩ) 100 V
VGS Gate-source Voltage ±20 V Drain Current (continuous)atTc =25o C20 A Drain Current (continuous)atTc =100o C14 A
IDM(•) Drain Current (pulsed) 80 A
Ptot Total DissipationatTc =25o C90 W
Derating Factor 0.6 W/oC
dv/dt(1) Peak Diode Recovery voltage slope 7 V/ns
Tstg Storage Temperature -65to 175 oC Max. Operating Junction Temperature 175 oC
(•) Pulse width limitedby safe operatingarea (1)ISD≤20 A,di/dt≤ 300 A/μs,VDD≤ V(BR)DSS,Tj≤ TJMAX
TYPE VDSS RDS(on) ID

STP20NE10 100V < 0.1Ω 20A
July 199823
TO-220

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THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
300 C/W
oC/W C/WC
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit

IAR Avalanche Current, Repetitiveor Not-Repetitive
(pulse width limitedbyTj max, δ <1%) A
EAS Single Pulse Avalanche Energy
(startingTj =25oC,ID =IAR,VDD =30V)
170 mJ
ELECTRICAL CHARACTERISTICS
(Tcase =25oC unless otherwise specified)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit

V(BR)DSS Drain-source
Breakdown Voltage =250 μAVGS =0 100 V
IDSS Zero Gate Voltage
Drain Current (VGS =0)
VDS =Max Rating
VDS =Max Rating Tc =125C
IGSS Gate-body Leakage
Current (VDS =0)
VGS= ± 20V ± 100 nA(∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit

VGS(th) Gate Threshold
Voltage
VDS =VGS ID =250 μA 2 34V
RDS(on) Static Drain-source On
Resistance
VGS =10V ID=10A 0.07 0.1 Ω
ID(on) On State Drain Current VDS >ID(on) xRDS(on)max
VGS =10V A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit

gfs (∗)Forward
Transconductance
VDS >ID(on) xRDS(on)max ID =10A 6 S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS =25Vf=1 MHz VGS=0 1600
STP20NE10
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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit

td(on)
Turn-on Time
Rise Time
VDD =30V ID =10A =4.7Ω VGS =10V
(see test circuit, figure3)
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD =80V ID =20A VGS =10V 38 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit

tr(Voff)
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD =80V ID =20A =4.7 Ω VGS =10V
(see test circuit, figure5)
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit

ISD
ISDM(•)
Source-drain Current
Source-drain Current
(pulsed)
VSD(∗) Forward On Voltage ISD =20A VGS =0 1.5 V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD=20A di/dt= 100 A/μs
VDD =30V Tj =150oC
(see test circuit, figure5)
(∗) Pulsed: Pulse duration=300μs, duty cycle1.5%
(•) Pulse widthlimitedby safeoperating area
Safe Operating Area Thermal Impedance
STP20NE10

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Output Characteristics
Transconductance
Gate Chargevs Gate-sourceVoltage
Transfer Characteristics
Static Drain-source On Resistance
Capacitance Variations
STP20NE10

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Normalized Gate Threshold Voltagevs
Temperature
Source-drain Diode Forward Characteristics
Normalized On Resistancevs Temperature
STP20NE10

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Fig.1: Unclamped Inductive Load Test Circuit
Fig.3:
Switching Times Test Circuits For
Resistive Load
Fig.2:
Unclamped Inductive Waveform
Fig.4:
Gate Charge test Circuit
Fig.5:
Test Circuit For Inductive Load Switching
And Diode Recovery Times
STP20NE10

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