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Partno	Mfg	Dc	Qty	Available	Descript
STB200NF03	ST	N/a	12	avai	N-CHANNEL 30V
STP200NF03	ST	N/a	4581	avai	N-CHANNEL 30V

STP200NF03 ,N-CHANNEL 30VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STP200NF04 ,N-CHANNEL 40VELECTRICAL CHARACTERISTICS (T =25°C UNLESS OTHERWISE SPECIFIED)CASETable 5: On/OffSymbol Parameter ..
STP20N06 ,OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-INSTP20N06STP20N06FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTP20N06 60 ..
STP20N10 ,NSTP20N10N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTP20N10 100 V < 0.12 ..
STP20NE06 ,NSTP20NE06STP20NE06FP®N - CHANNEL 60V - 0.06 Ω - 20A TO-220/TO-220FP STripFET™ POWER MOSFETTYPE V ..
STP20NE06FP. ,N-CHANNEL 60VFeatureSize™ " strip-based process. The resulting transi-stor shows extremely high packing density ..
SZ3536 , SURFACE MOUNT SILICON ZENER DIODES
SZ4510 , SURFACE MOUNT SILICON ZENER DIODES
SZ4511 , SURFACE MOUNT SILICON ZENER DIODES
SZ4512 , SURFACE MOUNT SILICON ZENER DIODES
SZ4513 , SURFACE MOUNT SILICON ZENER DIODES
SZ4514 , SURFACE MOUNT SILICON ZENER DIODES

STB200NF03-STP200NF03
N-CHANNEL 30V
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AUTOMOTIVE SPECIFIC
October 2002
STP200NF03
STB200NF03 STB200NF03-1
N-CHANNEL 30V - 0.0032 Ω - 120A D² PAK/I² PAK/TO-220
STripFET™ II POWER MOSFET TYPICAL RDS(on) = 0.0032Ω STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
APPLICATIONS HIGH CURRENT, HIGH SWITCHING SPEED DC-DC & DC-AC CONVERTERS SOLENOID AND RELAY DRIVERS
INTERNAL SCHEMATIC DIAGRAM
Ordering Information
ABSOLUTE MAXIMUM RATINGS
(•) Pulse width limited by safe operating area.
(**) Current Limited by Package
(1) ISD ≤120A, di/dt ≤400A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(2) Starting Tj = 25 oC, ID = 60 A, VDD = 25 V
STB200NF03/-1 STP200NF03
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)
OFF
ON (*)
DYNAMIC
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STB200NF03/-1 STP200NF03
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ELECTRICAL CHARACTERISTICS (continued)
STB200NF03/-1 STP200NF03
Output Characteristics Transfer Characteristics
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STB200NF03/-1 STP200NF03
Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature
STB200NF03/-1 STP200NF03
Allowable Iav vs. Time in Avalanche
Thermal Resistance Rthj-a vs PCB Copper Area Max Power Dissipation vs PCB Copper Area
The previous curve gives the safe operating area for unclamped inductive loads, single pulse or repetitive,
under the following conditions:
PD(AVE) = 0.5 * (1.3 * BVDSS * IAV)
EAS(AR) = PD(AVE) * tAV
Where:
IAV is the Allowable Current in Avalanche
PD(AVE) is the Average Power Dissipation in Avalanche (Single Pulse)
tAV is the Time in Avalanche
To derate above 25 oC, at fixed IAV, the following equation must be applied:
IAV = 2 * (Tjmax - TCASE)/ (1.3 * BVDSS * Zth)
Where:
Zth = K * Rth is the value coming from Normalized Thermal Response at fixed pulse width equal to TAV .
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